ИСТИНА	Войти в систему Регистрация
	Интеллектуальная Система Тематического Исследования НАукометрических данных
	Главная Поиск Статистика О проекте Помощь

---

Russian Microelectronicsжурнал

Статьи, опубликованные в журнале

• • 2024 Modeling the Functioning of Semiconductor Devices Taking into Account Defects in the Atomic Structure
  • Gainullin I.K.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 53, № 8, с. 810-814 DOI
• • 2024 Plasma Parameters and Etching Kinetics of Si/SiO2 in Mixtures of Fluorocarbon Gases with Argon and Helium
  • Efremov A.M., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 53, № 6, с. 567-575
• • 2024 Simulation of MHD-influence on silicon melt flow in Czochralski process
  • Verezub N.A., Prostomolotov A.I.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 53, № 8, с. 773-779 DOI
• • 2024 Structural Features and Electrical Properties of Si(Al) Thermomigration Channels for High-Voltage Photoelectric Converters
  • Lomov A.A., Seredin B.M., Martyushov S.Yu, Tatarintsev A.A., Popov V.P., Malibashev A.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 53, № 2, с. 135-146 DOI
• 
  • 2023 Atypical Raman Scattering on Magnetic Junctions in Metallic Nanowires
  • Krishtop V., Korepanov V., Fomin L., Zagorskiy D., Doludenko I.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S59-S66 DOI
• 
  • 2023 Comparative Study of LQU and LQFI Measures of Quantum Correlations in Two-Spin-1/2 Heisenberg Systems
  • Yurischev M.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № 1, с. S412-S418
• 
  • 2023 Fast Electrochemical Micropump for Portable Drug Delivery Module
  • Uvarov I.V., Shlepakov P.S., Abramychev A.M., Svetovoy V.B.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № 3, с. 186-194 DOI
• 
  • 2023 Flux-driven Traveling-Wave Parametric Amplifier with bi-SQUIDs cells
  • Kornev V.K., Kolotinskiy N.V., Nikolaeva A.N.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № Suppl 1, с. S44-S52 DOI
• 
  • 2023 Generation of Nonmaximally Entangled States between BECs with Quantum Optimal Control Methods
  • Lazarev I.D., Pyrkov A.N.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S403-S411 DOI
• 
  • 2023 Magnetic Properties of Ni Nanowires in Porous Anodic Alumina Matrix
  • Grushevski E.A., Savinski N.G., Trushin O.S., Shendrikova L.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S67-S70 DOI
• 
  • 2023 Nonequilibrium Diagram Technique Applied to the Electronic Transport via Tightly Bound Localized States
  • Kopchinskii I.D., Shorokhov V.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S337-S351 DOI
• • 2023 Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
  • Efremov A.M., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № 2, с. 99-106 DOI
• 
  • 2023 Strontium Iridates as Barrier Materials for Josephson Heterostructures
  • Kislinskii Y.V., Constantinian K.Y., Moskal I.E., Dubitskiy N.V., Petrzhik A.M., Shadrin A.V., Ovsyannikov G.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S53-S58 DOI
• 
  • 2023 Study of topographic features, shape, and mechanical stresses in microelectronic structures using geomorphometric techniques
  • Dedkova A.A., Florinsky I.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № S1, с. S257-S262 DOI
• • 2023 The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
  • Efremov A.M., Smirnov S.A., Betelin V.B.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 52, № 5, с. 372-378 DOI
• 
  • 2022 Analysis of hydrodynamics in the synthesis of crystals from water-salt solutions
  • Prostomolotov A.I., Verezub N.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 51, № 8, с. 662-666 DOI
• • 2022 On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture
  • Efremov A.M., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 51, № 5, с. 302-310 DOI
• • 2022 Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture
  • Efremov A.M., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 51, № 4, с. 247-254 DOI
• 
  • 2022 Technology and thermomechanics in growing tubular silicon single crystal
  • Verezub N.A., Kozhitov L.V., Kondratenko T.T., Prostomolotov A.I., Silaev I.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 51, № 8, с. 677-685 DOI
• • 2022 The study of nickel impurity segregation on LSNT perovskite open surfaces by ab initio molecular dynamics
  • Chistyakova A.A., Bazhanov D.I.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 51, № 8, с. 1-5 DOI
• 
  • 2021 Application of the Spectral Ellipsometry Method to Study the Processes of Atomic Layer Deposition
  • Miakonkikh A.V., Smirnova E.A., Clemente I.E.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 50, № 4, с. 230-238 DOI
• • 2021 Experimental Study of the Influence of the Porosity of Thin-Film Silicon-Based Anodes on Their Charge-Discharge Characteristics
  • Kulova T.L., Mazaletsky L.A., Mironenko A.A., Rudy A.S., Skundin A.M., Tortseva Yu S., Fedorov I.S.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 50, № 1, с. 44-52 DOI
• 
  • 2021 Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar
  • Efremov A.M., Smirnov S.A., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 50, № 6, с. 379-386 DOI
• 
  • 2021 Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption
  • Rudenko M.K., Myakon’kikh A.V., Lukichev V.F.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 50, № 1, с. 54-62 DOI
• • 2021 Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO2 in a CF4 + O2 Mixture in a Low Power Supply Mode
  • Efremov A.M., Betelin V.B., Kwon K.H.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 50, № 5, с. 303-310 DOI