Russian Microelectronicsжурнал

Статьи, опубликованные в журнале стиль:  обычный | ГОСТ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

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  • 2014 Investigation of the BF3 plasma particle’s lateral distribution using two-view emission tomography
  • Fadeev A.V., Rudenko K.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 43, № 6, с. 407-412 DOI
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  • 2014 New hybrid materials for organic light-emitting diode devices
  • Avetisov R.I., Petrova O.B., Akkuzina A.A., Khomyakov A.V., Saifutyarov R.R., Cherednichenko A.G., Makarov N.A., Avetisov I.K., Sagalova T.B.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 43, № 8, с. 526-530 DOI
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  • 2014 Verification of the algorithm for emission tomography of plasma inhomogeneities in a plasma-chemical reactor using the Langmuir multiprobe
  • Fadeev A.V., Rudenko K.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 43, № 4, с. 252-257 DOI
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  • 2013 Complex investigations of effects of charging a polymer resist (PMMA) during electron lithography
  • Rau E.I., Evstaf'Eva E.N., Zaitsev S.I., Knyazev M.A., Svintsov A.A., Tatarintsev A.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 42, № 2, с. 89-98 DOI
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  • 2013 Field-effect transistor with nanowire channel based on heterogeneously doped SOI
  • Amitonov S.V., Presnov D.E., Rudakov V.I., Krupenin V.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 42, № 3, с. 160-164 DOI
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  • 2013 Novel Metal Carbon Nanocomposites and Carbon Nanocrystalline Material with Promising Properties for the Development of Electronics
  • Kozhitov L.V., Kozlov V.V., Kostikova A.V., Popkova A.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 42, №  8, с. 498-507
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  • 2013 Photovoltaic effect in a structure based on amorphous and nanoporous silicon formed by plasma immersion ion implantation
  • Myakon’Kikh A.V., Rogozhin A.E., Rudenko K.V., Lukichev V.F.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 42, № 4, с. 246-252 DOI
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  • 2012 Development of ferromagnetic semiconductors for applications in spin electronics: State and outlook
  • Orlov A.F., Kulemanov I.V., Parkhomenko Y.N., Perov N.S., Semisalova A.S.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 41, № 8, с. 443-452 DOI
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  • 2012 Silicon nanowire field effect transistor made of silicon-on-insulator
  • Presnov D.E., Amitonov S.V., Krupenin V.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 41, № 5, с. 310-313 DOI
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  • 2012 Study of the atomically clean InSe(0001) surface by X-Ray photoelectron spectroscopy
  • Volykhov A.A., Neudachina V.S., Kharlamova M.V., Itkis D.M., Yashina L.V., Belogorokhov A.I.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 41, № 8, с. 521-526 DOI
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  • 2011 ERRATUM: READ-OUT ASIC FOR MICROSTRIP DETECTORS (RUSSIAN MICROELECTRONICS (2011) 40 :1 (52-58))
  • Voronin A., et al.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 40, № 2, с. 146
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  • 2011 On the Essence of High Photosensitivity of a-Si:H Layered Films
  • Kurova I.A., Ormont N.N.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 40, № 8, с. 616-619 DOI
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  • 2011 Optical Maskless Lithography
  • Belokopytov G.V., Ryzhikova Yu V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 40, № 6, с. 414-427
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  • 2011 Optimization of the tomographic algorithm of the reconstruction of plasma irregularities in process reactors of microelectronics
  • Fadeev A.V., Rudenko K.V., Lukichev V.F., Orlikovskii A.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 40, № 2, с. 108-118 DOI
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  • 2005 Short-circuited double Langmuir probe as a model of a conducting wafer under plasma processing
  • Aleksandrov A.F., Riaby V.A., Savinov V.P., Yakunin V.G.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 34, № 1, с. 18-21 DOI
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  • 2003 STATIONARY HIGH-FIELD DOMAIN IN SI: ZN AT THE EXCITATION THRESHOLD OF RECOMBINATION WAVES
  • Kornilov B.V., Privezentsev V.V., Gostev A.V., Rau E.I.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 32, № 5, с. 288
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  • 2002 Digital-reflectometry characterization of the surface structure and protective property of thin films
  • Kotenev V.A.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 31, № 6, с. 396-406
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  • 2001 COMPARATIVE ANALYSIS OF SCANNING ELECTRON MICROSCOPY TECHNIQUES FOR SEMICONDUCTORS: ELECTRON-BEAM-INDUCED POTENTIAL METHOD, SINGLE-CONTACT ELECTRON-BEAM-INDUCED CURRENT METHOD, AND THERMOACOUSTIC DETECTION
  • Rau E.I., Gostev A.V., Shiqiu Z., Phang D., Chan D., Thong D., Wong W.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 30, № 4, с. 207
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  • 1998 IMPROVEMENT OF THE ACCURACY OF DIFFRACTION MEASUREMENTS OF CIRCUIT FEATURE SIZES
  • Beklemishev N.N., Benevolenskii S.B., Istomina N.L., Kopylov P.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 27, с. 386-388
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  • 1996 Electrical breakdowns of MOS structures: A primary cause of chip degradation in plasma
  • Ryabyi V.A., Savinov V.P., Sporykhin A.A., Yakunin V.G.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 25, № 2, с. 115-121
• • 1996 MOS-structure electrical damage is the most important factor of microelectronic chips’ plasma degradation
  • Riaby V.A., Savinov V.P., Sporykhin A.A., Yakunin V.G.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 25, № 2, с. 45
• • 1986 ENERGY DIAGRAM OF A METAL-OXIDE GALLIUM-ARSENIDE STRUCTURE
  • KASHKAROV PK, OBRAZTSOV AN, SOROKIN IN, SOSNOVSKIKH YN
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 15, № 2, с. 77-82
• • 1986 PROPERTIES OF NBN-NB/PBSB JOSEPHSON TUNNEL-JUNCTIONS PREPARED IN A SINGLE VACUUM CYCLE
  • Kuzmin L.S., Maslennikov Y.V., Snigirev O.V.
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 15, № 6, с. 291-294
• • 1985 PREPARATION AND PROPERTIES OF OXIDE-FILMS ON THE SURFACE OF GAP
  • KASHKAROV PK, OBRAZTSOV AN, SOROKIN IN, SOSNOVSKIKH YN, SYAGAILO AI
  • в журнале Russian Microelectronics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 14, № 1, с. 27-30