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Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processesстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 4 октября 2018 г.
- Авторы: Miakonkikh A.V., Orlikovskiy N.A., Rogozhin A.E., Tatarintsev A.A., Rudenko K.V.
- Журнал: Russian Microelectronics
- Том: 47
- Номер: 3
- Год издания: 2018
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 157
- Последняя страница: 19
- DOI: 10.1134/S1063739718030101
- Аннотация: This article studied the resistance of the negative electron resist based on hydrogen-silsesquioxane (HSQ) depending on the dose of exposure in the process of Reactive Ion Etching (RIE). These studies showed the strong dependence of resistance on irradiation dose (in case of full development of the e-beam resist) even after annealing the resist 30 minutes 400°C in air. Selectivity up to 14 was obtained in the process of reactive ion etching of silicon in a mixture of gases SF6 : C4F8. These results can be used to manufacturing of silicon nanoscale structures. It was shown that the resistance to wet etching in a 5% solution of hydrofluoric acid (HF) is also determined by irradiation dose. Additionally, taking into account the obtained results, silicon nanowires of width 10 nm with an aspect ratio of 1 : 10 was manufactured.
- Добавил в систему: Татаринцев Андрей Андреевич