Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstractsсборник

Статьи, опубликованные в сборнике

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• • 2016 Characteristics simulation of single-electron transistor based on the molecule with accentuated single-atom Rh detached charge center
  • Parshintsev A.A., Shorokhov V.V., Soldatov E.S.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 178-P2-12
• • 2016 Formation of metal electrodes with a nanoscale separation using an evaporated resist
  • Dagesyan S., Zharik G., Soldatov E.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 173-P2-07
• • 2016 Nanowire based Field Effect Transistor for the detection of different biological objects
  • Presnov D., Presnova G., Bozhjev I., Rubtsova M., Trifonov A., Krupenin V.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 177-P2-11
• • 2016 Silicon nanowire based local field probe
  • Bozhev I., Trifonov A., Presnov D., Krupenin V.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 175-P2-09
• • 2016 Single-electron transistor based on intramolecular single-atom charge center
  • Gaydamachenko V., Beloglazkina E., Petrov R., Sapkov I., Soldatov E., Dagesyan S.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 170-P2-04
• • 2016 Single-electron transistor based on several dopant atoms
  • Dagesyan S., Shorokhov V., Presnov D., Soldatov E., Trifonov A., Krupenin V.
  • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2016", ICMNE 2016, October 3-7, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts, место издания Institute of Physics and Technology of the RAS, Москва, тезисы, с. 172-P2-06