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Transport and trap states in proton irradiated ultra-thick k-Ga2O3статья
- Авторы: Polyakov A.Y., Nikolaev V.I., Pechnikov A.I., Yakimov E.B., Lagov P.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lee In-Hwan, Pearton S.J.
- Журнал: Journal of Vacuum Science and Technology A
- Том: 41
- Номер: 3
- Год издания: 2023
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 032705-1
- Последняя страница: 032705-6
- Номер статьи: 032705
- DOI: 10.1116/6.0002673
- Аннотация: hanges induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm−3, with the two dominant donors having ionization energies of 0.25 and 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor spectra measured by capacitance-voltage profiling under illumination showed optical ionization thresholds near 2, 2.8, and 3.4 eV. The diffusion length of nonequilibrium charge carriers for ɛ-Ga2O3 was 70 ± 5 nm prior to irradiation. After irradiation with 1.1 MeV protons to a fluence of 1014 cm−2, there was total depletion of mobile charge carriers in the top 4.5 μm of the film, close to the estimated proton range. The carrier removal rate was 10–20 cm−1, a factor of 5–10 lower than in β-Ga2O3, while the concentration of deep acceptors in the lower half of the bandgap and the diffusion length showed no significant change.
- Добавил в систему: Лагов Петр Борисович