ИСТИНА

Pearton S.J.

Соавторы: Shchemerov I.V., Лагов П.Б., Поляков А.Я., Смирнов Н.Б., Павлов Ю.С., Kochkova A., Alexanyan L.A., Butté R., Chernykh A., Grandjean N., Haller C., Mosca M., Якимов Е.Б. показать полностью..., Carlin J.F., Chernykh S.V., Shiko A.S., Carmin J., Didenko S.I., Garanin N.S., Kim J., Kukharchuk O.F., Kulevoy T.V., Lee I.H., Mares, Minghan X., Ren F., Sergey Z., Shcherbatchev K.D., Shikoh S.A., Stolbunov V.S., Suvorov A.A., Tal'nishnih N.A., Vasilev A.A., Yang J., hh h., ред ).

10 статей

Количество цитирований статей в журналах по данным Web of Science: 87, Scopus: 92

IstinaResearcherID (IRID): 96656880

Деятельность

• Статьи в журналах

  • 
    • 2020 Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Kochkova A.I., Shikoh S.A., Shchemerov I.V., Chernykh A.V., Lagov P.B., Pavlov Yuri S., Carlin J.F., Mosca M., Grandjean N., Pearton S.J.
    • в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 845, с. 156269 DOI
  • 
    • 2020 Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Shikoh Ali Sehpar, Shchemerov Ivan V., Chernykh Sergey V., Lagov P.B., Pavlov Yuri S., Kochkova Anastasia I., Carlin Jean-Francois, Mosca Mauro, Grandjean Nicolas, Pearton Stephen J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111 DOI
  • 
    • 2020 Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Yakimov E.B., Chernykh A.V., Kochkova A.I., Lagov P.B., Pavlov Yuri S., Kukharchuk O.F., Suvorov A.A., Garanin N.S., In-Hwan Lee, Minghan Xian, Fan Ren, Pearton S.J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 27 DOI
  • 
    • 2019 Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
    • Polyakov A.Y., Haller C., Smirnov N.B., Shiko A.S., Shchemerov I.V., Chernykh S.V., Alexanyan L.A., Lagov P.B., Pavlov Yu S., Carlin J.F., Mosca M., Butté R., Grandjean N., Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 126, № 12, с. 125708 DOI
  • 
    • 2018 Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
    • Polyakov A.Y., Shmidt N.M., Smirnov N.B., Shchemerov I.V., Shabunina E.I., Tal’nishnih N.A., Lagov P.B., Pavlov Yu S., Alexanyan L.A., Pearton S.J.
    • в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 7, № 6, с. 323-328 DOI
  • 
    • 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Yakimov E.B., Pearton S.J., Fares C., Yang J., Ren F., Kim J., Lagov P.B., Stolbunov V.S., Kochkova A.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 113, № 092102, с. 092102-1-092102-5 DOI
  • 
    • 2018 Hole traps and persistent photocapacitance in proton irradiated b-Ga2O3 films
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Pearton S.J., Ren F., Chernykh A.V., Lagov P.B., Kulevoy T.V.
    • в журнале APL Materials, издательство AIP Publishing (United States), том 6, № 9, с. 096102-1-096102-10 DOI
  • 
    • 2017 Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Chung T.H., Lagov P.B., Zinov’ev R.A., Pearton S.J.
    • в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 6, № 10, с. Q127-Q131 DOI
  • 
    • 2017 Electron irradiation of near-UV GaN/InGaN light emitting diodes
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Shmidt N.M., Tal'nishnih N.A., Shabunina E.I., Cho H.S., Hwang S.M., Zinovyev R.A., Didenko S.I., Lagov P.B., Pearton S.J.
    • в журнале Physica Status Solidi (A) Applications and Materials Science, издательство Wiley - V C H Verlag GmbbH & Co. (Germany), том 214, № 10, с. 316-320 DOI
  • 
    • 2017 Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Lagov P.B., Zinov'ev R.A., Yakimov E.B., Shcherbachev K.D., Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 122, № 11, с. 115704-1-115704-6 DOI