ИСТИНА

Pearton S.J.

Соавторы: Лагов П.Б., Поляков А.Я., Щемеров И.В., Смирнов Н.Б., Павлов Ю.С., Kochkova A., Chernykh A., Vasilev A.A., Якимов Е.Б., Lee I.H., Alexanyan L.A., Butté R., Grandjean N. показать полностью..., Haller C., Kulevoy T.V., Mosca M., Ren F., Кобец У.А., Carlin J.F., Chernykh S.V., Nikolaev V.I., Pechnikov A.I., Shiko A.S., Stolbunov V.S., Zhevnerov E.V., Мяконьких А.В., Borzykh I.V., Carmin J., Didenko S.I., Doroshkevich A.S., Drenin A.S., Garanin N.S., Gorbatkova O.G., Guzilova L., Isayev R.S., Khrisanov I.A., Kim J., Kim J., Kukharchuk O.F., Kuznetsov A., Mares, Meshkov I.N., Miliachenko A.D., Minghan X., Orlov O.S., Pechnikov A., Sergey Z., Shcherbatchev K.D., Shetinin I., Shikoh S.A., Sidorin A.A., Siemek K., Stepanov S.I., Suvorov A.A., Tal'nishnih N.A., Xian M., Yang J., hh h., Иванов Е.М., Летовальцева М.Е., Паничкин А.В., ред ).

17 статей

Количество цитирований статей в журналах по данным Web of Science: 144, Scopus: 159

IstinaResearcherID (IRID): 96656880

Деятельность

• Статьи в журналах

  • • 2023 Carrier Removal Rates in 1.1 MeV Proton Irradiated $\upalpha$-Ga2O3 (Sn)
    • Polyakov A.Y., Nikolaev Vladimir, Pechnikov Alexei, Lagov P.B., Shchemerov Ivan V., Vasilev Anton, Chernykh Alexey V., Kochkova Anastasia I., Guzilova Lyubov, Pavlov Yuri S., Kulevoy Timur V., Doroshkevich A.S., Isayev Rafael Sh, Panichkin A.V., Pearton Stephen J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 56, № 30, с. 305103 DOI
  • • 2023 Conducting Surface Layers Formed by Hydrogenation of O-Implanted Beta-Ga2O3
    • Polyakov Alexander Y., Vasilev A., Shchemerov I., Chernyk A., Shetinin I., Zhevnerov E.V., Kochkova A.I., Lagov P.B., Miakonkich A.V., Pavlov Yuri, Kobets U.A., Lee In-Hwan, Kuznetsov A., Pearton Stephen
    • в журнале SSRN Electronic Journal, издательство Elsevier B.V. (Netherlands) DOI
  • • 2023 Conducting Surface Layers Formed by Hydrogenation of O-implanted β-Ga2O3
    • Polyakov A.Y., Vasilev A.A., Shchemerov I.V., Chernykh A.V., Shetinin I.V., Zhevnerov E.V., Kochkova A.I., Lagov P.B., Miakonkikh A.V., Pavlov Yu S., Kobets U.A., Lee In-Hwan, Kuznetsov A., Pearton S.J.
    • в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 945, с. 169258 DOI
  • • 2023 Transport and trap states in proton irradiated ultra-thick k-Ga2O3
    • Polyakov A.Y., Nikolaev V.I., Pechnikov A.I., Yakimov E.B., Lagov P.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lee In-Hwan, Pearton S.J.
    • в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 41, № 3, с. 032705-1-032705-6 DOI
  • • 2022 Point defect creation by proton and carbon irradiation of α-Ga2O3
    • Polyakov Alexander Y., Nikolaev Vladimir I., Meshkov Igor N., Siemek Krzysztof, Lagov Petr B., Yakimov Eugene B., Pechnikov Alexei I., Orlov Oleg S., Sidorin Alexey A., Stepanov Sergey I., Shchemerov Ivan V., Vasilev Anton A., Chernykh Alexey V., Losev Anton A., Miliachenko Alexandr D., Khrisanov Igor A., Pavlov Yu S., Kobets U.A., Pearton Stephen J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 132, № 3, с. 035701 DOI
  • 
    • 2021 1 GeV proton damage in β-Ga2O3
    • Polyakov A.Y., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Smirnov N.B., Chernykh A.V., Yakimov E.B., Lagov P.B., Pavlov Yu S., Ivanov E.M., Gorbatkova O.G., Drenin A.S., Letovaltseva M.E., Xian Minghan, Ren Fan, Kim Jihyun, Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 18 DOI
  • 
    • 2021 Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lagov P.B., Pavlov Yu S., Stolbunov V.S., Kulevoy T.V., Borzykh I.V., Lee In-Hwan, Ren Fan, Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 3, с. 035701-035701 DOI
  • 
    • 2020 Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Kochkova A.I., Shikoh S.A., Shchemerov I.V., Chernykh A.V., Lagov P.B., Pavlov Yuri S., Carlin J.F., Mosca M., Grandjean N., Pearton S.J.
    • в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 845, с. 156269 DOI
  • 
    • 2020 Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Shikoh Ali Sehpar, Shchemerov Ivan V., Chernykh Sergey V., Lagov P.B., Pavlov Yuri S., Kochkova Anastasia I., Carlin Jean-Francois, Mosca Mauro, Grandjean Nicolas, Pearton Stephen J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111 DOI
  • 
    • 2020 Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Yakimov E.B., Chernykh A.V., Kochkova A.I., Lagov P.B., Pavlov Yuri S., Kukharchuk O.F., Suvorov A.A., Garanin N.S., In-Hwan Lee, Minghan Xian, Fan Ren, Pearton S.J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 27 DOI
  • 
    • 2019 Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
    • Polyakov A.Y., Haller C., Smirnov N.B., Shiko A.S., Shchemerov I.V., Chernykh S.V., Alexanyan L.A., Lagov P.B., Pavlov Yu S., Carlin J.F., Mosca M., Butté R., Grandjean N., Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 126, № 12, с. 125708 DOI
  • 
    • 2018 Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
    • Polyakov A.Y., Shmidt N.M., Smirnov N.B., Shchemerov I.V., Shabunina E.I., Tal’nishnih N.A., Lagov P.B., Pavlov Yu S., Alexanyan L.A., Pearton S.J.
    • в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 7, № 6, с. 323-328 DOI
  • 
    • 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Yakimov E.B., Pearton S.J., Fares C., Yang J., Ren F., Kim J., Lagov P.B., Stolbunov V.S., Kochkova A.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 113, № 092102, с. 092102-1-092102-5 DOI
  • 
    • 2018 Hole traps and persistent photocapacitance in proton irradiated b-Ga2O3 films
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Pearton S.J., Ren F., Chernykh A.V., Lagov P.B., Kulevoy T.V.
    • в журнале APL Materials, издательство AIP Publishing (United States), том 6, № 9, с. 096102-1-096102-10 DOI
  • 
    • 2017 Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Chung T.H., Lagov P.B., Zinov’ev R.A., Pearton S.J.
    • в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 6, № 10, с. Q127-Q131 DOI
  • 
    • 2017 Electron irradiation of near-UV GaN/InGaN light emitting diodes
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Shmidt N.M., Tal'nishnih N.A., Shabunina E.I., Cho H.S., Hwang S.M., Zinovyev R.A., Didenko S.I., Lagov P.B., Pearton S.J.
    • в журнале Physica Status Solidi (A) Applications and Materials Science, издательство Wiley - V C H Verlag GmbbH & Co. (Germany), том 214, № 10, с. 316-320 DOI
  • 
    • 2017 Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments
    • Lee I.H., Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Lagov P.B., Zinov'ev R.A., Yakimov E.B., Shcherbachev K.D., Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 122, № 11, с. 115704-1-115704-6 DOI