Pearton S.J.
Количество цитирований статей в журналах по данным
Web of Science: 144,
Scopus: 159
IstinaResearcherID (IRID): 96656880
Деятельность
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Статьи в журналах
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2022
Point defect creation by proton and carbon irradiation of α-Ga2O3
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Polyakov Alexander Y.,
Nikolaev Vladimir I.,
Meshkov Igor N.,
Siemek Krzysztof,
Lagov Petr B.,
Yakimov Eugene B.,
Pechnikov Alexei I.,
Orlov Oleg S.,
Sidorin Alexey A.,
Stepanov Sergey I.,
Shchemerov Ivan V.,
Vasilev Anton A.,
Chernykh Alexey V.,
Losev Anton A.,
Miliachenko Alexandr D.,
Khrisanov Igor A.,
Pavlov Yu S.,
Kobets U.A.,
Pearton Stephen J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 132, № 3, с. 035701
DOI
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2021
1 GeV proton damage in β-Ga2O3
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Polyakov A.Y.,
Shchemerov I.V.,
Vasilev A.A.,
Kochkova A.I.,
Smirnov N.B.,
Chernykh A.V.,
Yakimov E.B.,
Lagov P.B.,
Pavlov Yu S.,
Ivanov E.M.,
Gorbatkova O.G.,
Drenin A.S.,
Letovaltseva M.E.,
Xian Minghan,
Ren Fan,
Kim Jihyun,
Pearton S.J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 18
DOI
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2021
Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3
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Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Vasilev A.A.,
Kochkova A.I.,
Chernykh A.V.,
Lagov P.B.,
Pavlov Yu S.,
Stolbunov V.S.,
Kulevoy T.V.,
Borzykh I.V.,
Lee In-Hwan,
Ren Fan,
Pearton S.J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 3, с. 035701-035701
DOI
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2020
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
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Polyakov A.Y.,
Haller C.,
Butté R.,
Smirnov N.B.,
Alexanyan L.A.,
Kochkova A.I.,
Shikoh S.A.,
Shchemerov I.V.,
Chernykh A.V.,
Lagov P.B.,
Pavlov Yuri S.,
Carlin J.F.,
Mosca M.,
Grandjean N.,
Pearton S.J.
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в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 845, с. 156269
DOI
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2020
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
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Polyakov A.Y.,
Haller C.,
Butté R.,
Smirnov N.B.,
Alexanyan L.A.,
Shikoh Ali Sehpar,
Shchemerov Ivan V.,
Chernykh Sergey V.,
Lagov P.B.,
Pavlov Yuri S.,
Kochkova Anastasia I.,
Carlin Jean-Francois,
Mosca Mauro,
Grandjean Nicolas,
Pearton Stephen J.
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в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111
DOI
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2020
Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3
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Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Vasilev A.A.,
Yakimov E.B.,
Chernykh A.V.,
Kochkova A.I.,
Lagov P.B.,
Pavlov Yuri S.,
Kukharchuk O.F.,
Suvorov A.A.,
Garanin N.S.,
In-Hwan Lee,
Minghan Xian,
Fan Ren,
Pearton S.J.
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в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 27
DOI
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2019
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
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Polyakov A.Y.,
Haller C.,
Smirnov N.B.,
Shiko A.S.,
Shchemerov I.V.,
Chernykh S.V.,
Alexanyan L.A.,
Lagov P.B.,
Pavlov Yu S.,
Carlin J.F.,
Mosca M.,
Butté R.,
Grandjean N.,
Pearton S.J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 126, № 12, с. 125708
DOI
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2018
Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
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Polyakov A.Y.,
Shmidt N.M.,
Smirnov N.B.,
Shchemerov I.V.,
Shabunina E.I.,
Tal’nishnih N.A.,
Lagov P.B.,
Pavlov Yu S.,
Alexanyan L.A.,
Pearton S.J.
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в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 7, № 6, с. 323-328
DOI
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2018
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
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Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Yakimov E.B.,
Pearton S.J.,
Fares C.,
Yang J.,
Ren F.,
Kim J.,
Lagov P.B.,
Stolbunov V.S.,
Kochkova A.
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в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 113, № 092102, с. 092102-1-092102-5
DOI
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2018
Hole traps and persistent photocapacitance in proton irradiated b-Ga2O3 films
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Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Pearton S.J.,
Ren F.,
Chernykh A.V.,
Lagov P.B.,
Kulevoy T.V.
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в журнале APL Materials, издательство AIP Publishing (United States), том 6, № 9, с. 096102-1-096102-10
DOI
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2017
Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
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Lee I.H.,
Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Chung T.H.,
Lagov P.B.,
Zinov’ev R.A.,
Pearton S.J.
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в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 6, № 10, с. Q127-Q131
DOI
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2017
Electron irradiation of near-UV GaN/InGaN light emitting diodes
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Lee I.H.,
Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Shmidt N.M.,
Tal'nishnih N.A.,
Shabunina E.I.,
Cho H.S.,
Hwang S.M.,
Zinovyev R.A.,
Didenko S.I.,
Lagov P.B.,
Pearton S.J.
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в журнале Physica Status Solidi (A) Applications and Materials Science, издательство Wiley - V C H Verlag GmbbH & Co. (Germany), том 214, № 10, с. 316-320
DOI
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2017
Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments
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Lee I.H.,
Polyakov A.Y.,
Smirnov N.B.,
Shchemerov I.V.,
Lagov P.B.,
Zinov'ev R.A.,
Yakimov E.B.,
Shcherbachev K.D.,
Pearton S.J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 122, № 11, с. 115704-1-115704-6
DOI