ИСТИНА

Kochkova A.

Соавторы: Pearton S.J., Лагов П.Б., Поляков А.Я., Щемеров И.В., Павлов Ю.С., Chernykh A., Vasilev A.A., Смирнов Н.Б., Lee I.H., Якимов Е.Б., Ren F., Alexanyan L.A., Butté R. показать полностью..., Grandjean N., Haller C., Kulevoy T.V., Mosca M., Stolbunov V.S., Zhevnerov E.V., Кобец У.А., Мяконьких А.В., Borzykh I.V., Carlin J.F., Carmin J., Chernykh S.V., Doroshkevich A.S., Drenin A.S., Garanin N.S., Gorbatkova O.G., Guzilova L., Isayev R.S., Kim J., Kim J., Kukharchuk O.F., Kuznetsov A., Mares, Minghan X., Nikolaev V.I., Pechnikov A., Pechnikov A.I., Shetinin I., Shiko A.S., Shikoh S.A., Suvorov A.A., Xian M., Yang J., Иванов Е.М., Летовальцева М.Е., Паничкин А.В., ред ).

10 статей

Количество цитирований статей в журналах по данным Web of Science: 57, Scopus: 59

IstinaResearcherID (IRID): 144143833

Деятельность

• Статьи в журналах

  • • 2023 Carrier Removal Rates in 1.1 MeV Proton Irradiated $\upalpha$-Ga2O3 (Sn)
    • Polyakov A.Y., Nikolaev Vladimir, Pechnikov Alexei, Lagov P.B., Shchemerov Ivan V., Vasilev Anton, Chernykh Alexey V., Kochkova Anastasia I., Guzilova Lyubov, Pavlov Yuri S., Kulevoy Timur V., Doroshkevich A.S., Isayev Rafael Sh, Panichkin A.V., Pearton Stephen J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 56, № 30, с. 305103 DOI
  • • 2023 Conducting Surface Layers Formed by Hydrogenation of O-Implanted Beta-Ga2O3
    • Polyakov Alexander Y., Vasilev A., Shchemerov I., Chernyk A., Shetinin I., Zhevnerov E.V., Kochkova A.I., Lagov P.B., Miakonkich A.V., Pavlov Yuri, Kobets U.A., Lee In-Hwan, Kuznetsov A., Pearton Stephen
    • в журнале SSRN Electronic Journal, издательство Elsevier B.V. (Netherlands) DOI
  • • 2023 Conducting Surface Layers Formed by Hydrogenation of O-implanted β-Ga2O3
    • Polyakov A.Y., Vasilev A.A., Shchemerov I.V., Chernykh A.V., Shetinin I.V., Zhevnerov E.V., Kochkova A.I., Lagov P.B., Miakonkikh A.V., Pavlov Yu S., Kobets U.A., Lee In-Hwan, Kuznetsov A., Pearton S.J.
    • в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 945, с. 169258 DOI
  • • 2023 Transport and trap states in proton irradiated ultra-thick k-Ga2O3
    • Polyakov A.Y., Nikolaev V.I., Pechnikov A.I., Yakimov E.B., Lagov P.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lee In-Hwan, Pearton S.J.
    • в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 41, № 3, с. 032705-1-032705-6 DOI
  • 
    • 2021 1 GeV proton damage in β-Ga2O3
    • Polyakov A.Y., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Smirnov N.B., Chernykh A.V., Yakimov E.B., Lagov P.B., Pavlov Yu S., Ivanov E.M., Gorbatkova O.G., Drenin A.S., Letovaltseva M.E., Xian Minghan, Ren Fan, Kim Jihyun, Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 18 DOI
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    • 2021 Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lagov P.B., Pavlov Yu S., Stolbunov V.S., Kulevoy T.V., Borzykh I.V., Lee In-Hwan, Ren Fan, Pearton S.J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 130, № 3, с. 035701-035701 DOI
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    • 2020 Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Kochkova A.I., Shikoh S.A., Shchemerov I.V., Chernykh A.V., Lagov P.B., Pavlov Yuri S., Carlin J.F., Mosca M., Grandjean N., Pearton S.J.
    • в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 845, с. 156269 DOI
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    • 2020 Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
    • Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Shikoh Ali Sehpar, Shchemerov Ivan V., Chernykh Sergey V., Lagov P.B., Pavlov Yuri S., Kochkova Anastasia I., Carlin Jean-Francois, Mosca Mauro, Grandjean Nicolas, Pearton Stephen J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111 DOI
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    • 2020 Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Yakimov E.B., Chernykh A.V., Kochkova A.I., Lagov P.B., Pavlov Yuri S., Kukharchuk O.F., Suvorov A.A., Garanin N.S., In-Hwan Lee, Minghan Xian, Fan Ren, Pearton S.J.
    • в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 27 DOI
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    • 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
    • Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Yakimov E.B., Pearton S.J., Fares C., Yang J., Ren F., Kim J., Lagov P.B., Stolbunov V.S., Kochkova A.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 113, № 092102, с. 092102-1-092102-5 DOI