ИСТИНА

Baklanov M.R.

Соавторы: Лопаев Д.В., Рахимова Т.В., Манкелевич Ю.А., Зырянов С.М., Рахимов А.Т., Васильева А.Н., Зотович А.И., Ковалев А.С., Прошина О.В., Брагинский О.В., de Marneffe J., Палов А.П., Malykhin E.M. показать полностью..., Воронина Е.Н., Курчиков К.А., Braginsky O.V., Malykhin E.M., Samara V., Wang S., el O.Z., Волошин Д.Г., Afanas'ev V.V., Felim V., He P., Heyne M.H., Ho P.S., Huang T.H., Jousseaume V., Krishtab M.B., Lazzarino F., Liping Z., Miakonkikh A., Otell Z.e., Rakhlinsky V.V., Sergej, Shi H., Shohet J.L., Urbanowicz A.M., Vishnevskiy Y.V., Xin-Ping Q., Yingjie W., Yiting S., de Gendt S., de Marneffe J.F., Маслаков К.И., Резванов А.А., Руденко К.В.

26 статей, 12 докладов на конференциях

Количество цитирований статей в журналах по данным Web of Science: 165, Scopus: 191

IstinaResearcherID (IRID): 2467527

Деятельность стиль:  обычный | ГОСТ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• Статьи в журналах

  • 
    • 2019 Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
    • Baklanov M.R., Jousseaume V., Rakhimova T.V., Lopaev D.V., Mankelevich Yu A., Afanas'ev V.V., Shohet J.L., King S.W., Ryan E.T.
    • в журнале APPLIED PHYSICS REVIEWS, том 6, № 1, с. 011301 DOI
  • 
    • 2018 A non-destructive, fast evaluation of PVD diffusion barriers deposited on porous low-k dielectrics
    • Yingjie Wang, Peng He, Jing Zhang, Jiang Yan, Lopaev D.V., Xin-Ping Qu, Baklanov M.R.
    • в журнале Microelectronic Engineering, издательство Elsevier BV (Netherlands), том 198, с. 22 DOI
  • 
    • 2018 Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
    • Lopaev D.V., Rakhimova T.V., Rakhimov A.T., Zotovich A.I., Zyryanov S.M., Baklanov M.R.
    • в журнале Journal of Physics D - Applied Physics, издательство Institute of Physics Publishing (United Kingdom), том 51, № 2, с. 02LT02 DOI
  • 
    • 2018 Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate film
    • Lopaev D.V., Zyryanov S.M., Zotovich A.I., Rakhimova T.V., Mankelevich Yu A., Rakhimov A.T., Baklanov M.R.
    • в журнале Plasma Processes and Polymers, издательство Wiley - V C H Verlag GmbbH & Co. (Germany), с. e1700213 DOI
  • 
    • 2017 Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas
    • Rezvanov Askar, Miakonkikh Andrey V., Vishnevskiy Alexey S., Rudenko Konstantin V., Baklanov Mikhail R.
    • в журнале Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, том 35, № 2, с. 021204 DOI
  • 
    • 2017 Damage and etching of ultra low-k materials in fluorocarbon plasma at lowered temperatures
    • Lopaev D., Mankelevich Yu A., Rakhimova T.V., Zotovich Alexey, Zyryanov S.M., Baklanov Mikhail R.
    • в журнале Journal of Physics D - Applied Physics, издательство Institute of Physics Publishing (United Kingdom), том 50, с. 485202 DOI
  • 
    • 2017 Experimental and DFT study of nitrogen atoms interactions with SiOCH low-k films
    • Voronina E.N., Mankelevich Yu A., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Zotovich A.I., Baklanov M.R.
    • в журнале European Physical Journal D, издательство Springer Verlag (Germany), том 71, с. 111 DOI
  • 
    • 2017 Fluorine atoms interaction with the nanoporous materials: experiment and DFT simulation
    • Mankelevich Yu A., Voronina E.N., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Baklanov M.R.
    • в журнале European Physical Journal D, издательство Springer Verlag (Germany), том 71, № 5, с. 126 DOI
  • 
    • 2017 Photoabsorption and damage of OSG low-k films by VUV emission at 140-160 nm
    • Lopaev D.V., Rakhlinsky V.V., Zyryanov S.M., Mankelevich Yu A., Rakhimova T.V., Kurchikov K.A., Baklanov M.R.
    • в журнале Plasma Processes and Polymers, издательство Wiley - V C H Verlag GmbbH & Co. (Germany), с. e1700166 DOI
  • 
    • 2016 Comparison of vacuum ultra-violet emission of Ar/CF4and Ar/CF3I capacitively coupled plasmas
    • Zotovich A., Proshina O., el Otell Z., Lopaev D., Rakhimova T., Rakhimov A., de Marneffe J.F., Baklanov M.R.
    • в журнале Plasma Sources Science and Technology, издательство Institute of Physics Publishing (United Kingdom), том 25, № 5, с. 055001 DOI
  • 
    • 2016 Multi-step reactions mechanism for F atoms interactions with organosilicate glass and SiOx films
    • Mankelevich Yu A., Voronina E.N., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Baklanov M.R.
    • в журнале Journal of Physics D - Applied Physics, издательство Institute of Physics Publishing (United Kingdom), том 49, № 34, с. 345203 DOI
  • 
    • 2016 Surface-confined Activation of Ultra Low-k Dielectrics in CO2 Plasma
    • Yiting Sun, Mikhail Krishtab, Yuri Mankelevich, Liping Zhang, Steven De Feyter, Mikhail Baklanov, Silvia Armini
    • в журнале Applied Physics Letters, издательство American Institute of Physics (United States), том 108, с. 262902 DOI
  • 
    • 2015 Experimental and theoretical study of RF capacitively coupled plasma in Ar–CF4–CF3I mixtures
    • Proshina O.V., Rakhimova T.V., Lopaev D.V., Samara V., Baklanov M.R., de Marneffe J-F
    • в журнале Plasma Sources Science and Technology, издательство Institute of Physics Publishing (United Kingdom), том 24, с. 055006 DOI
  • 
    • 2015 Interaction of F atoms with SiOCH ultra low-k films Part II: etching
    • Rakhimova T.V., Lopaev D.V., Mankelevich Y.A., Kurchikov K.A., Zyryanov S.M., Palov A.P., Proshina O.V., Maslakov K.I., Baklanov M.R.
    • в журнале Journal of Physics D - Applied Physics, издательство Institute of Physics Publishing (United Kingdom), том 48, № 17, с. 175204-(14pp) DOI
  • 
    • 2015 Vacuum ultra-violet emission of CF4 and CF3I containing plasmas and Their effect on low-k materials
    • el Otell Z., Šamara V., Zotovich A., Hansen T., de Marneffe J.F., Baklanov M.R.
    • в журнале Journal of Physics D - Applied Physics, издательство Institute of Physics Publishing (United Kingdom), том 48, № 39, с. 395202 DOI
  • 
    • 2014 Improved Plasma Resistance for Porous Low-k Dielectrics by Pore Stuffing Approach
    • Liping Zhang, de Marneffe Jean-Francois, Heyne Markus H., Sergej Naumov, Yiting Sun, Alexey Zotovich, Otell Ziad el, Felim Vajda, Stefan De Gendt, Baklanov Mikhail R.
    • в журнале ECS Journal of Solid State Science and Technology, издательство Electrochemical Society, Inc. (United States), том 4, № 1, с. 3098-3107 DOI
  • 
    • 2013 Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation
    • Rakhimova T.V., Rakhimov A.T., Mankelevich Yu A., Lopaev D.V., Kovalev A.S., Vasil’eva A.N., Proshina O.V., Braginsky O.V., Zyryanov S.M., Kurchikov K., Novikova N.N., Baklanov M.R.
    • в журнале Applied Physics Letters, издательство American Institute of Physics (United States), том 102, № 11, с. 111902 DOI
  • • 2013 Plasma processing of low-k dielectrics
    • Baklanov Mikhail R., de Marneffe Jean-Francois, Shamiryan Denis, Urbanowicz Adam M., Shi Hualiang, Rakhimova Tatyana V., Huang Huai, Ho Paul S.
    • в журнале Journal of Applied Physics, издательство American Institute of Physics (United States), том 113, № 4 DOI
  • • 2012 Ultra low-k dielectrics damage under VUV and EUV radiation
    • Sergey Zyryanov, Oleg Braginsky, Alexander Kovalev, Dmitry Lopaev, Yury Mankelevich, Tatyana Rakhimova, Alexander Rakhimov, Anna Vasilieva, Mikhail Baklanov
    • в журнале Bulletin of the American Physical Society, 65th Annual Gaseous Electronics Conference, том 57, № 8
  • 
    • 2011 The Effect of He Plasma Treatment on Properties of Organosilicate Glass Low-K Films
    • Braginsky O.V., Kovalev A.S., Lopaev D.V., Malykhin E.M., Mankelevich Yu A., Proshina O.V., Rakhimova T.V., Rakhimov A.T., Voloshin D.G., Vasilieva A.N., Zyryanov S.M., Smirnov E.A., Baklanov M.R.
    • в журнале Journal of Applied Physics, издательство American Institute of Physics (United States), том 109, № 4, с. 043303 DOI
  • 
    • 2010 The Mechanism of Low-K SiOCH Film Modification by Oxygen Atoms
    • Braginsky O.V., Kovalev A.S., Lopaev D.V., Malykhin E.M., Mankelevich Yu A., Rakhimova T.V., Rakhimov A.T., Vasilieva A.N., Zyryanov S.M., Baklanov M.R.
    • в журнале Journal of Applied Physics, издательство American Institute of Physics (United States), том 108, № 7, с. 073303 DOI
  • • 2009 The influence of He plasma pretreatment on O and H atom interaction with low-k nanoporous materials
    • Braginsky O.V., Kovalev A.S., Lopaev D.V., Malykhin E.M., Mankelevich Yu A., Rakhimova T.V., Rakhimov A.T., Vasilieva A.N., Zyryanov S.M., Baklanov M.R.
    • в журнале Bulletin of the American Physical Society, 62nd Annual Gaseous Electronics Conference, том 54, № 12

• Статьи в сборниках

  • 
    • 2014 The chemistry screening for ultra low-k dielectrics plasma etching
    • Zotovich A., Krishtab M., Lazzarino F., Baklanov M.R.
    • в сборнике Proceedings of SPIE - The International Society for Optical Engineering, с. 944002-1-944002-10 DOI
  • • 2013 Effects of VUV and EUV Radiation on Ultra Low-k Materials Damage
    • Oleg Braginsky, Alexander Kovalev, Dmitry Lopaev, Yury Mankelevich, Olga Proshina, Tatyana Rakhimova, Alexander Rakhimov, Anna Vasilieva, Sergey Zyryanov, Mikhail Baklanov
    • в сборнике MRS Online Proceedings Library, издательство Cambridge University Press (United Kingdom), том 1559, с. mrss13-1559-aa03-11 DOI
  • • 2009 Interaction of О and Н Atoms with Low-K SiOCH Films Pretreated in He Plasma
    • Braginsky O.V., Kovalev A.S., Lopaev D.V., Mankelevich Y.A., Malykhin E.M., Proshina O.V., Rakhimova T.V., Rakhimov A.T., Vasilieva A.N., Voloshin D.G., Zyryanov S.M., Baklanov M.R.
    • в сборнике Materials Research Society Symposium Proceedings, место издания Materials Research Society, том 1156 DOI
  • • 2008 Recombination Probabilities of О and Н Atoms on the Surface of Nanoporous Low-K SiOCH Dielectrics
    • Braginsky O.V., Kovalev A.S., Lopaev D.V., Malykhin E.M., Mankelevich Yu A., Rakhimova T.V., Rakhimov A.T., Vasilieva A.N., Zyryanov S.M., Baklanov M.R.
    • в сборнике Proceedings of Advanced Metallization Conference (AMC), September 23-25 2008, San Diego California, USA, and October 8-10 2008, Tokyo, Japan, место издания San Diego California, USA, and Tokyo, Japan

• Доклады на конференциях

  • • 2016 Multi-step reactions mechanism of F and N atoms interactions with SiOCH low-k films (Стендовый)
    • Авторы: Mankelevich Yu A., Voronina E.N., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Baklanov M.R.
    • XXI European Conference on Dynamics of Molecular Systems (MOLEC 2016), Toledo, Испания, 11-16 сентября 2016
  • • 2016 Experimental and ab initio study of nitrogen atoms interaction with SiOCH low-k films (Стендовый)
    • Авторы: Mankelevich Yu A., Voronina E.N., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Zotovich A.I., Baklanov M.R.
    • International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces (MPS2016), Москва, Россия, 23-26 августа 2016
  • • 2016 Fluorine atoms interaction with the nanoporous materials: Experiment and ab initio simulation (Устный)
    • Авторы: Mankelevich Yu A., Voronina E.N., Rakhimova T.V., Palov A.P., Lopaev D.V., Zyryanov S.M., Baklanov M.R.
    • International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces (MPS2016), Москва, Россия, 23-26 августа 2016
  • • 2016 Ultra low-k etching by neutral beams produced from CF4/Ar and SF6/Ar ICP plasmas (Стендовый)
    • Авторы: Alexey Zotovich, Otell Ziad el, Yvonne Sutton, Braithwaite N.St J, de Marneffe Jean-Francois, Mikhail Baklanov
    • PESM 2016, Франция, 9-10 мая 2016
  • • 2015 Interaction of atomic fluorine with porous low-k SiOCH films: modeling (Стендовый)
    • Авторы: Palov A., Voronina E., Lopaev D., Mankelevich Yu, Rakhimova T., Zyryanov S., Proshina O., Baklanov M.
    • ISPC 2015 22nd International Symposium on Plasma Chemistry, Антверпен, Бельгия, 5-10 июля 2015
  • • 2015 Low-k OSG damage and etching by F atoms at lowered temperatures (Стендовый)
    • Авторы: Zyryanov S., Kurchikov K., Lopaev D., Mankelevich Yu, Palov A., Rakhimova T., Voronina E., Novikova N., Baklanov M.
    • ISPC 2015 22nd International Symposium on Plasma Chemistry, Антверпен, Бельгия, 5-10 июля 2015
  • • 2015 Comparison between Vacuum Ultra-Violet emission of CF4/Ar and CF3I/Ar plasmas in CCP chamber for low-k etching (Стендовый)
    • Авторы: Zotovich Alexey I., Otell Ziad el, de Marneffe Jean-Francois, Proshina Olga V., Lopaev Dmitry V., Rakhimova Tatyana V., Baklanov Mikhail R.
    • PESM 2015, Leuven, Бельгия, 27-28 апреля 2015
  • • 2015 Effect of VUV photons on low-k OSG damage and etching by F atoms at the lowered temperature (Устный)
    • Авторы: Rakhimova T.V., Mankelevich Yu A., Lopaev D.V., Kurchikov K.A., Zyryanov S.M., Zotovich A.I., Baklanov M.R.
    • PESM 2015, Leuven, Бельгия, 27-28 апреля 2015
  • • 2014 Comparative analysis of the factors leading to low-k degradation during the integration process (Устный)
    • Авторы: Zotovich A., Krishtab M., Lazzarino F., Baklanov M.R.
    • IC MNE 2014, Россия, Звенигород, Россия, 2014
  • • 2014 The chemistry screening for ultra low-k dielectrics plasma etching (Устный)
    • Авторы: Krishtab M., Zotovich A., Lazzarino F., Baklanov M.R.
    • IC MNE 2014, Россия, Звенигород, Россия, 2014
  • • 2013 1-D model of RF CCP discharge in Ar/CF4/CF3I gas mixtures (Устный)
    • Авторы: Olga Proshina, Tatyana Rakhimova, Mihail Baklanov
    • PESM 2013 (14 - 15 March 2013, Leuven Belgium), Лёвен, Бельгия, 14-15 марта 2013
  • • 2013 1D model of OSG low-k films modification by EUV/VUV emission (Устный)
    • Авторы: Rakhimov A.T., Mankelevich Yu A., Rakhimova T.V., Lopaev D.V., Zyryanov S.M., Kovalev A.S., Vasil'eva A.N., Proshina O.V., Braginsky O.V., Kurchikov K., Baklanov M.R.
    • PESM 2013 (14 - 15 March 2013, Leuven Belgium), Лёвен, Бельгия, 14-15 марта 2013