Express characterization of indirect semiconductor surfaces by in situ photoluminescence during chemical and electrochemical treatmentsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The interband photoluminescence (PL) of indirect semiconductors is controlled by the non-radiative bulk and surface recombination processes and in this way the PL signal is a measure for surface passivation. We demonstrate a stroboscopic PL probe as a powerful tool for the express in situ control of indirect semiconductor surfaces during low temperature passivation processes. Samples of Group IV and III-V indirect-gap semiconductors (c-Si, c-Ge, c-SiGe and epitaxial layers and c-GaP) are investigated during chemical and electrochemical treatments. The surface passivation of Si and Ge depends differently on the pH. (C) 1998 Elsevier Science B.V.