|
ИСТИНА |
Войти в систему Регистрация |
Интеллектуальная Система Тематического Исследования НАукометрических данных |
||
Semiconductorsжурнал
- Издательство: Izdatel'stva Nauka
- Местоположение издательства: Russian Federation
Статьи, опубликованные в журнале
стиль:
обычный |
ГОСТ |
plain |
abbrv |
acm |
alpha |
amsalpha |
amsplain |
apalike |
ieeetr |
siam
-
- 2017 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
- Krishtopenko S.S., Ikonnikov A.V., Maremyanin K.V., Bovkun L.S., Spirin K.E., Kadykov A.M., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B.R., Putyato M.A., Emelyanov E.A., Preobrazhenskii V.V., Gavrilenko V.I.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 1, с. 38-42 DOI
-
- 2017 Electroreflectance Spectra from Multiple InGaN/GaN Quantum Wells in the Nonuniform Electric Field of a p–n Junction
- Avakyants L.P., Aslanyan A.E., Bokov P.Yu, Chervyakov A.V., Polozhentsev K.Yu
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 189-192
-
- 2017 Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers
- Senokosov E.A., Chukita V.I., Khamidullin R.A., Cheban V.N., Odin I.N., Chukichev M.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 5, с. 657-662
-
- 2017 Modification of the Termal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a:Si-H Films by Weak Illumination during the Initial Stage of Relaxation
- Kurova and N N Ormont I/ A/
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 4, с. 417-419 DOI
-
- 2017 Modification of the Thermal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a-Si:H Films by Weak Illumination during the Initial Stage of Relaxation
- Kurova I.A., Ormont N.N.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 4, с. 417-419 DOI
-
- 2017 Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices
- Shuleiko D.V., Zabotnov S.V., Zhigunov D.M., Zelenina A.A., Kamenskih I.A., Kashkarov P.K.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 196-202 DOI
-
- 2017 Raman Scattering in InP Doped by Be+-Ion Implantation
- Avakyants L.P., Bokov P.Yu, Chervyakov A.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 168-172
-
- 2017 Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
- Pavlikov A.V., Latukhina N.V., Chepurnov V.I., Timoshenko V.Yu
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 3, с. 402-406 DOI
-
- 2017 Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al2O3 of different thicknesses
- Valeev R.G., Trigub A.L., Chukavin A.I., Beltiukov A.N.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 207-212 DOI
-
- 2017 Study of the distribution profile of iron ions Implanted into silicon
- Kozhemyako A.V., Balakshin Yu V., Shemukhin A.A., Chernysh V.S.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 6, с. 778-782 DOI
