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Semiconductorsжурнал

Статьи, опубликованные в журнале стиль:  обычный | ГОСТ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• • 2020 Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite
  • Amasev D.V., Mikhalevich V.G., Tameev A.R., Saitov Sh R., Kazanskii A.G.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 54, № 6, с. 543-546 DOI
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  • 2020 High-Frequency Conductivity of Disordered Semiconductors in the Region of the Transition from the Linear to Quadratic Frequency Dependence
  • Ormont M.A., Zvyagin I.P.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 54, № 1, с. 33-39 DOI
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  • 2019 Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
  • Липкова Е.А., Ефимова А.И., Гончар К.А., Преснов Д.Е., Елисеев А.А., Лапшин А.Н., Тимошенко В.Ю.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 11, с. 1557-1561 DOI
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  • 2019 Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation
  • Smirnov A.M., Golinskaya A.D., Zharkova E.V., Bubenov S.S., Dorofeev S.G., Dneprovskii V.S.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 16, с. 2155-2157 DOI
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  • 2019 Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films
  • Krylov P.N., Alalykin A.S., Durman E.A., Zakirova R.M., Fedotova I.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 11, с. 1457-1464 DOI
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  • 2019 Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides
  • Novitskii A.P., Serhiienko I.A., Novikov S.V., Kuskov K.V., Leybo D.V., Pankratova D.S., Burkov A.T., Khovaylo V.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 2, с. 215-219 DOI
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  • 2019 Effect of the copper contents on the kinetics of the microwave photoconductivity of CIGS solid solutions
  • Novikov G.F., Rabenok E.V., Orishina P.S., Gapanovich M.V., Odin I.N.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 3, с. 304-309 DOI
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  • 2019 Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds
  • Voronin A.I., Serhiienko I.A., Ashim Ye Zh, Kurichenko V.L., Novitskii A.P., Inerbaev T.M., Umetsu R., Khovaylo V.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 13, с. 1856-1859 DOI
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  • 2019 Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols
  • Kononov N.N., Davydova D.V., Bubenov S.S., Dorofeev S.G.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 4, с. 552-565 DOI
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  • 2019 Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature
  • Uaman Svetikova T.A., Ikonnikov A.V., Rumyantsev V.V., Kozlov D.V., Chernichkin V.I., Galeeva A.V., Varavin V.S., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 9, с. 1266-1271 DOI
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  • 2019 Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAsStructures Used for the Production of Mid-IR Photodetectors
  • Krivobok V.S., Litvinov D.A., Nikolaev S.N., Onishchenko E.E., Pashkeev D.A., Chernopittsky M.A., Grigor’eva L.N.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 12, с. 1608-1616 DOI
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  • 2019 Features of defect formation in nanostructured silicon under ion irradiation
  • Kozhemiako A.V., Evseev A.P., Balakshin Yu V., Shemukhin A.A.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 6, с. 800-805 DOI
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  • 2019 Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes
  • Ikonnikov A.V., Chernichkin V.I., Dudin V.S., Akopian D.A., Akimov A.N., Klimov A.E., Tereshchenko O.E., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 9, с. 1272-1277 DOI
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  • 2019 Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films
  • Amasev D.V., Tameev A.R., Kazanskii A.G.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 12, с. 1597-1602 DOI
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  • 2019 Influence of La Doping on the Transport Properties of Bi1–xLaxCuSeO Oxyselenides
  • Pankratova D.S., Novitskii A.P., Kuskov K.V., Sergienko I.A., Leybo D.V., Burkov A.T., Konstantinov P.P., Khovaylo V.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 5, с. 624-627 DOI
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  • 2019 Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys
  • Taranova A.I., Novitskii A.P., Voronin A.I., Taskaev S.V., Khovaylo V.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 6, с. 768-771 DOI
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  • 2019 Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
  • Balakshin Yu V., Kozhemiako A.V., Petrovic S., Erich M., Shemukhin A.A., Chernysh V.S.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 8, с. 1011-1017 DOI
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  • 2019 Investigation into the distribution of built-in electric fields in led heterostructures with multiple GAN/INGAN quantum wells by electroreflectance spectoscopy
  • Aslanyan A.E., Avakyants L.P., Bokov P.Y., Chervyakov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 4, с. 477-483
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  • 2019 Modification of Carbon-Nanotube Wettability by Ion Irradiation
  • Morkovkin A.I., Vorobyeva E.A., Evseev A.P., Balakshin Yu V., Shemukhin A.A.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 12, с. 1683-1687 DOI
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  • 2019 Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr3 Nanocrystals
  • Drozdov K.A., Krylov I.V., Chizhov A.S., Rumyantseva M.N., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 6, с. 814-818 DOI
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  • 2019 Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators
  • Galeeva A.V., Gomanko M.A., Tamm M.E., Yashina L.V., Danilov S.N., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 1, с. 37-41 DOI
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  • 2019 STRUCTURE AND PROPERTIES OF ZN-IMPLANTED SI NEAR-SURFACE LAYER MODIFICATION DEPENDING ON IRRADIATION FLUENCE OF 132 XE 26+ IONS WITH ENERGY OF 167 MEV
  • Privezentsev V.V., Kulikauskas V.S., Skuratov V.A., Zilova O.S., Burmistrov A.A., Presnyakov M.Y., Goryachev A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 3, с. 313-320 DOI
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  • 2019 Temperature coefficient of movement of the resonance level of iron in Pb1-x-ySnxFeyTe alloys
  • Skipetrov E.P., Kovalev B.B., Skipetrova L.A., Knotko A.V., Slynko V.E.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 11, с. 1419-1426 DOI
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  • 2019 Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths
  • Dmitriev A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 4, с. 419-427 DOI
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  • 2018 Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates
  • Ivanenko I.P., Krasnoshchekov S.V., Pavlikov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 7, с. 907-913 DOI