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Semiconductorsжурнал

Статьи, опубликованные в журнале

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  • 2024 Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation
  • Pokryshkin N.S., Sobina I.O., Knysh A.A., Eremina A.S., Syuy A.V., Yakunin V.G., Timoshenko V.Yu
  • в журнале Semiconductors, издательство Springer (New York), том 58, № 2, с. 170-175 DOI
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  • 2023 Peculiarities of photoinduced heating of perovskite nanocrystals with effective anti-Stokes photoluminescence under near-resonant laser excitation
  • Pokryshkin N.S., Sobina I.O., Knysh A.A., Eremina A.S., Syuy A.V., Yakunin V.G., Timoshenko V.Yu
  • в журнале Semiconductors, издательство Springer (New York), том 57, № 7, с. 567-572 DOI
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  • 2023 Temperature Degradation of 2.3, 3.2 and 4.1 THz Quantum Cascade Lasers
  • Belov D.A., Ikonnikov A.V., Pushkarev S.S., Galiev R.R., Ponomarev D.S., Khokhlov D.R., Ushakov D.V., Afonenko A.A., Morozov S.V., Gavrilenko V.I., Khabibullin R.A.
  • в журнале Semiconductors, издательство Springer (New York), том 57, № 9, с. 383-388 DOI
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  • 2022 Magnetic properties of Pb1-ySсyTe alloys
  • Skipetrov E.P., Bogdanov E.V., Skipetrova L.A., Solovev A.A., Knotko A.V.
  • в журнале Semiconductors, издательство Springer (New York), том 56, № 14, с. 2131-2139 DOI
• • 2022 Mott and Efros–Shklovskii Variable-Range Hopping Conduction in Films Formed by Silicon Nanoparticles Doped with Phosphorus and Boron
  • Dorofeev S.G., Kononov N.N., Bubenov S.S., Popelensky V.M., Vinokurov A.A.
  • в журнале Semiconductors, издательство Springer (New York), том 56, № 2, с. 58-66 DOI
• • 2022 Phase transformations in composite films of the system Se-Cu, obtained using explosive crystallization and thermal annealing
  • Kogai V.Ya, Mogileva T.N., Fateev A.E., Mikheev G.M.
  • в журнале Semiconductors, издательство Springer (New York), том 56, № 6, с. 380-386 DOI
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  • 2022 Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance
  • Burmistrov E.R., Avakyants L.P.
  • в журнале Semiconductors, издательство Springer (New York), том 55, № 11, с. 1059-1067 DOI
• • 2022 Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals
  • Kul’bachinskii V.A., Kytin V.G., Apreleva A.S., Konstantinova E.A.
  • в журнале Semiconductors, издательство Springer (New York), том 56, № 2, с. 78-84 DOI
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  • 2021 Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons
  • Volkova E.V., Loginov A.B., Loginov B.A., Tarasova E.A., Puzanov A.S., Korolev S.A., Semyonovykh E.S., Khazanova S.V., Obolensky S.V.
  • в журнале Semiconductors, издательство Springer (New York), том 55, № 12, с. 903-906 DOI
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  • 2021 Photoaccumulating Nanoheterostructures Based on Titanium Dioxide
  • Konstantinova E.A., Zaitsev V.B., Kytina E.V., Marikutsa A.V.
  • в журнале Semiconductors, издательство Springer (New York), том 55, № 2, с. 219-227 DOI
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  • 2021 Quantum-Confinement Effect in Silicon Nanocrystals during Their Dissolution in Model Biological Fluids
  • Gongalsky M.B., Tsurikova U.A., Gonchar K.A., Gvindgiliiia G.Z., Osminkina L.А.
  • в журнале Semiconductors, издательство Springer (New York), том 55, с. 61-65 DOI
• • 2021 Study of the Sensitivity of Porous SnO2-Based Thick-Film Elements to the Hydrogen Concentration in Air
  • Amelichev V.V., Generalov S.S., Nikolaeva A.V., Polomoshnov S.A., Kovalev V.A., Kovalev A.M., Krivetskiy V.V.
  • в журнале Semiconductors, издательство Springer (New York) DOI
• • 2021 Surface Morphology and Optical Properties of Glassy Selenium Films after Laser Modification
  • Aleksandrovich E.V., Aleksandrovich A.N., Bystrov S.G., Mikheev G.M.
  • в журнале Semiconductors, издательство Springer (New York), том 55, № 5, с. 582-588 DOI
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  • 2020 Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene
  • Shvetsov B.S., Minnekhanov A.A., Nesmelov A.A., Martyshov M.N., Rylkov V.V., Demin V.A., Emelyanov A.V.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 9, с. 1103-1107 DOI
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  • 2020 Effect of a nickel impurity on the galvanomagnetic properties and electronic structure of PbTe
  • Skipetrov E.P., Kovalev B.B., Shevchenko I.V., Knotko A.V., Slynko V.E.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 10, с. 1171-1179 DOI
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  • 2020 Evolution of Electron Transport under Resistive Switching in Porphyrazine Films
  • Drozdov K.A., Krylov I.V., Vasilik V.A., Kosov A.D., Dubinina T.V., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Springer (New York), том 55, № 3, с. 296-300 DOI
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  • 2020 Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite
  • Amasev D.V., Mikhalevich V.G., Tameev A.R., Saitov Sh R., Kazanskii A.G.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 6, с. 543-546 DOI
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  • 2020 High-Frequency Conductivity of Disordered Semiconductors in the Region of the Transition from the Linear to Quadratic Frequency Dependence
  • Ormont M.A., Zvyagin I.P.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 1, с. 33-39 DOI
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  • 2020 Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates
  • Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Khudyakov Yu Yu, Mizerov A.M., Timoshnev S.N., Arsentyev I.N., Beltyukov A.N., Leiste Harald, Kukushkin S.A.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 5, с. 596-608 DOI
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  • 2020 Influence of the Degree of Crystallinity on the Dispersion of the Optical Parameters of Ge2Sb2Te5 Phase-Change Memory Thin Films
  • Fedyanina M.E., Lazarenko P.I., Vorobyov Y.V., Kozyukhin S.A., Dedkova A.A., Yakubov A.O., Levitskii V.S., Sagunova I.V., Sherchenkov A.A.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 13, с. 1775-1783 DOI
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  • 2020 Investigation into the internal electric-field strength in the active region of InGaN/GaN-based LED structures with various numbers of quantumwells by electrotransmission spectroscopy
  • Aslanyan A.E., Avakyants L.P., Chervyakov A.V., Turkin A.N., Mirzai S.S., Kureshov V.A., Sabitov D.R., Marmalyuk A.A.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 4, с. 495-500
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  • 2020 Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures
  • Ormnt N.N., Kurova I.A.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 4, с. 437-440 DOI
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  • 2020 Nonlinear optical response of the colloidal CdSe nanoplatelets under one-photon stationary excitation of excitons
  • Smirnov A.M., Golinskaya A.D., Kozlova M.V., Zharkova E.V., Saidzhonov B.M., Vasiliev R.B., Dneprovskii V.S.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 14, с. 1907-1910 DOI
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  • 2020 Optical and Transport Properties of Epitaxial Pb0.74Sn0.26Te(In) Films with a Modifiable Surface
  • Ikonnikov A.V., Dudin V.S., Artamkin A.I., Akimov A.N., Klimov A.E., Tereshchenko O.E., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 9, с. 1086-1091 DOI
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  • 2020 Photoreversible current in InGaN/GaN-based LED hetterostructures with different numbers of QWS
  • Aslanyan A.E., Avakyants L.P., Chervyakov A.V., Turkin A.N., Kureshov V.A., Sabitov D.R., Marmalyuk A.A.
  • в журнале Semiconductors, издательство Springer (New York), том 54, № 3, с. 362-365