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Semiconductorsжурнал

Статьи, опубликованные в журнале стиль:  обычный | ГОСТ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• • 2019 Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths
  • Dmitriev A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 53, № 4, с. 441-449 DOI
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  • 2018 Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates
  • Ivanenko I.P., Krasnoshchekov S.V., Pavlikov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 7, с. 907-913 DOI
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  • 2018 Contribution of iron clusters to the magnetic properties of Pb1–yFeyTe alloys
  • Skipetrov E.P., Solovev A.A., Slynko V.E.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 6, с. 686-691 DOI
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  • 2018 Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells
  • Rumyantsev V.V., Kulikov N.S., Kadykov A.M., Fadeev M.A., Ikonnikov A.V., Kazakov A.S., Zholudev M.S., Aleshkin V.Ya, Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 11, с. 1376-1380 DOI
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  • 2018 Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
  • Ilin A.S., Matsukatova A.N., Forsh P.A., Vygranenko Yu
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 12, с. 1638-1641 DOI
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  • 2018 Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime
  • Ormont M.A., Zvyagin I.P.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 2, с. 150-155 DOI
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  • 2018 GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells
  • Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lysak V.V., Lahderanta E., Cirlin G.E.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 5, с. 609-611 DOI
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  • 2018 Kinetics of the changes in magnetic impurity ion concentration in Pb1−x−ySnxVyTe alloys with doping
  • Skipetrov E.P., Konstantinov N.S., Skipetrova L.A., Knotko A.V., Slynko V.E.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 7, с. 828-835 DOI
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  • 2018 Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs
  • Volkov V.V., Kogan L.M., Turkin A.N., Yunovich A.E.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 10, с. 1293-1297 DOI
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  • 2018 Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T
  • Bovkun L.S., Maremyanin K.V., Ikonnikov A.V., Spirin K.E., Aleshkin V.Ya, Potemski M., Piot B., Orlita M., Mikhailov N.N., Dvoretskii S.A., Gavrilenko V.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 11, с. 1387-1392 DOI
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  • 2018 Modification of Photoconductivity Spectra in ZnO-CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation
  • Drozdov K.A., Krylov I.V., Chizhov A.S., Rumyantseva M.N., Ryabova L.I., Khokhlov D.R.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 7, с. 902-906 DOI
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  • 2018 Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure
  • Novodvorsky O.A., Mikhalevsky V.A., Gusev D.S., Lotin A.A., Parshina L.S., Khramova O.D., Cherebylo E.A., Drovosekov A.B., Rylkov V.V., Nikolaev S.N., Chernoglazov K.Yu, Maslakov K.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 11, с. 1424-1427 DOI
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  • 2018 Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates
  • Avakyants L.P., Bokov P.Yu, Bazalevskii M.A., Deev P.M., Chervyakov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 7, с. 849-852 DOI
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  • 2018 Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets
  • Smirnov A.M., Golinskaya A.D., Przhiyalkovskii D.V., Kozlova M.V., Saidzhonov B.M., Vasiliev R.B., Dneprovskii V.S.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 14, с. 1798-1800 DOI
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  • 2018 Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure
  • Kogai V.Ya, Mikheev G.M.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 8, с. 957-960 DOI
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  • 2018 THz Stimulated Emission from Simple Superlattice in Positive Differential Conductivity Region
  • Andronov A.A., Ikonnikov A.V., Maremianin K.V., Pozdnjakova V.I., Nozdrin Y.N., Marmalyuk A.A., Padalitsa A.A., Ladugin M.A., Belyakov V.A., Ladenkov I.V., Fefelov A.G.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 4, с. 431-435 DOI
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  • 2018 Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors
  • Maremyanin K.V., Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Chizhevskii E.G., Zasavitskii I.I., Gavrilenko V.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 12, с. 1590-1594 DOI
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  • 2018 Transverse Magneto-Optical Kerr Effect in Magnetite Covered by Array of Gold Nanostripes
  • Dyakov S.A., Spitzer F., Akimov I., Yavsin D.A., Pavlov S.I., Verbin S.Y., Tikhodeev S.G., Gippius N.A., Pevtsov A.B., Bayer M.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 52, № 14, с. 1857-1860
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  • 2017 Criterion for strong localization on a semiconductor surface in the Thomas?Fermi approximation
  • Bondarenko V.B., Filimonov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 10, с. 1321-1325
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  • 2017 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
  • Krishtopenko S.S., Ikonnikov A.V., Maremyanin K.V., Bovkun L.S., Spirin K.E., Kadykov A.M., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B.R., Putyato M.A., Emelyanov E.A., Preobrazhenskii V.V., Gavrilenko V.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 1, с. 38-42 DOI
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  • 2017 Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
  • Sekerbayev K.S., Taurbayev Ye T., Efimova A.I., Timoshenko V.Yu, Taurbayev T.I.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 8, с. 1047-1051 DOI
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  • 2017 Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction
  • Avakyants L.P., Aslanyan A.E., Bokov P.Yu, Polozhentsev K.Yu, Chervyakov A.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 189-192 DOI
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  • 2017 Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers
  • Senokosov E.A., Chukita V.I., Khamidullin R.A., Cheban V.N., Odin I.N., Chukichev M.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 5, с. 657-662 DOI
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  • 2017 Formation of Zinc Oxide Nanorods by Precipitation Method
  • Avdeeva A.V., Zang X., Muradova A.G., Yurtov E.V.
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 13, с. 1724-1727 DOI
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  • 2017 Modification of the Termal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a:Si-H Films by Weak Illumination during the Initial Stage of Relaxation
  • Kurova and N N Ormont I/ A/
  • в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 4, с. 417-419 DOI