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Semiconductorsжурнал
- Издательство: Izdatel'stva Nauka
- Местоположение издательства: Russian Federation
Статьи, опубликованные в журнале
стиль:
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ГОСТ |
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abbrv |
acm |
alpha |
amsalpha |
amsplain |
apalike |
ieeetr |
siam
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- 2017 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
- Krishtopenko S.S., Ikonnikov A.V., Maremyanin K.V., Bovkun L.S., Spirin K.E., Kadykov A.M., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B.R., Putyato M.A., Emelyanov E.A., Preobrazhenskii V.V., Gavrilenko V.I.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 1, с. 38-42 DOI
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- 2017 Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
- Sekerbayev K.S., Taurbayev Ye T., Efimova A.I., Timoshenko V.Yu, Taurbayev T.I.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 8, с. 1047-1051 DOI
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- 2017 Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction
- Avakyants L.P., Aslanyan A.E., Bokov P.Yu, Polozhentsev K.Yu, Chervyakov A.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 189-192 DOI
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- 2017 Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers
- Senokosov E.A., Chukita V.I., Khamidullin R.A., Cheban V.N., Odin I.N., Chukichev M.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 5, с. 657-662 DOI
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- 2017 Modification of the Termal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a:Si-H Films by Weak Illumination during the Initial Stage of Relaxation
- Kurova and N N Ormont I/ A/
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 4, с. 417-419 DOI
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- 2017 Modification of the Thermal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a-Si:H Films by Weak Illumination during the Initial Stage of Relaxation
- Kurova I.A., Ormont N.N.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 4, с. 417-419 DOI
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- 2017 Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices
- Shuleiko D.V., Zabotnov S.V., Zhigunov D.M., Zelenina A.A., Kamenskih I.A., Kashkarov P.K.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 196-202 DOI
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- 2017 Preparation and study of the thermoelectric properties of Fe2TiSn1–xSix Heusler alloys
- Voronin A.I., Zueva V.Y., Karpenkov D.Y., Moskovskikh D.O., Novitskii A.P., Miki H., Khovaylo V.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 7, с. 891-893 DOI
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- 2017 Raman Scattering in InP Doped by Be+-Ion Implantation
- Avakyants L.P., Bokov P.Yu, Chervyakov A.V.
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 2, с. 168-172
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- 2017 Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
- Pavlikov A.V., Latukhina N.V., Chepurnov V.I., Timoshenko V.Yu
- в журнале Semiconductors, издательство Izdatel'stva Nauka (Russian Federation), том 51, № 3, с. 402-406 DOI
