2013 IEEE International Electron Devices Meetingсборник

Статьи, опубликованные в сборнике

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• • 2013 Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)
  • Cheng Ran, Liu Bin, Guo Pengfei, Yang Yue, Zhou Qian, Gong Xiao, Dong Yuan, Tong Yi, Bourdelle Konstantin, Daval Nicolas, Delprat Daniel, Nguyen Bich-Yen, Augendre Emmanuel, Yeo Yee-Chia
  • в сборнике 2013 IEEE International Electron Devices Meeting, место издания IEEE DOI
• • 2013 Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling
  • Knoll L., Zhao Q.T., Nichau A., Richter S., Luong G.V., Trellenkamp S., Schafer A., Selmi L., Bourdelle K.K., Mantl S.
  • в сборнике 2013 IEEE International Electron Devices Meeting, место издания IEEE DOI