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Статьи в журналах
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- 2009 SEM AND SIMS STUDY OF THE BURIED SIXNY LAYER FORMED IN SILICON
- Saad A.M., Frantskevich A.V., Frantskevich N.V., Fedotov A.K., Mazanik A.V., Rau E.I., Wegierek P., Kołtunowicz T., Zukowski P.
- в журнале Vacuum, издательство Elsevier Ltd (London), том 83
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- 2008 SEM INVESTIGATION OF SURFACE DEFECTS ARISING AT THE FORMATION OF A BURIED NITROGEN-CONTAINING LAYER IN SILICON
- Frantskevich A.V., Frantskevich N.V., Saad A.M., Fedotov A.K., Mazanik A.V., Rau E.I.
- в журнале Solid State Phenomena, с. 195
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- 2005 FORMATION OF BURIED INSULATING ISLAND-LIKE SIO2 LAYER IN SILICON
- Frantskevich A.V., Frantskevich N.V., Fedotov A.K., Mazanik A.V., Rau E.I., Kulinkayskas V.S.
- в журнале Materials Science and Engineering B