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Terahertz photoconductive antennas based on silicon-doped GaAs (111)Aстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Klimov Evgeniy, Klochkov Aleksey, Solyankin Petr, Pushkarev Sergei, Galiev Galib, Yuzeeva Nataliya, Shkurinov Aleksandr
- Журнал: International Journal of Modern Physics B
- Год издания: 2023
- Издательство: World Scientific Publishing Co
- Местоположение издательства: Singapore
- DOI: 10.1142/s0217979224503788
- Аннотация: In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As+Ga traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.
- Добавил в систему: Шкуринов Александр Павлович