Resistive switching in graphene/graphene oxide/ZnO heterostructuresстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июня 2014 г.
Аннотация:Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated
using optical and electrical characterizations. ZnO nanorods grown on graphene substrate
by using the hydrothermal method were used for local oxidation of graphene and the formation of
self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field.
The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by
thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical
heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could
be used to fabricate high-density memory devices with low power consumption.