Modification of the Termal Relaxation Kinetics of the Photoinduced (at T=425 K) Metastable Dark Conductivity of a:Si-H Films by Weak Illumination during the Initial Stage of Relaxationстатья
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Дата последнего поиска статьи во внешних источниках: 12 июля 2019 г.
Аннотация:It is studied the effect of weak illumination at the initial stage of relaxation of dark metastable conductivity of undoped a:Si-H films photoinduced at T=425 K on the rate of its subsequent thermal relaxation. It is found that kinetics of relaxation after illumination or in the absence of illumination is described by stretched exponents with values of the parameters and that are less in the case of illumination. It is shown that decreasing of these parameters increases the rate of thermal relaxation of the dark conductivity of the film. Since temperature and illumination intensities at which the studies were conducted were low, changes of the rate of metastable conductivity relaxation was hardly associated with a significant restructuring of the amorphous network. Perhaps this is due to changes in hydrogen bond system perticularly to the processes of generation and relaxation of slow photoinduced defects under the influence of pre-illumination.