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Self-consistent modeling of microwave activated N2/CH4/H2 (and N2/H2) plasmas relevant to diamond chemical vapor depositionстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или ScopusДата последнего поиска статьи во внешних источниках: 1 апреля 2022 г.
- Авторы: Ashfold Michael N.R., Mankelevich Yuri A.
- Журнал: Plasma Sources Science and Technology
- Том: 31
- Номер: 3
- Год издания: 2022
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 035005
- DOI: 10.1088/1361-6595/ac409e
- Аннотация: The growth rate of diamond by chemical vapor deposition (CVD) from microwave (MW)plasma activated CH4/H2 gas mixtures can be significantly enhanced by adding tracequantities of N2 to the process gas mixture. Reasons for this increase remain unclear. Thepresent article reports new, self-consistent two-dimensional modeling of MWactivated N2/H2and N2/CH4/H2 plasmas operating at pressures and powers relevant to contemporary diamondCVD, the results of which are compared and tensioned against available experimental data.The enhanced N/C/H plasma chemical modeling reveals the very limited reactivity of N2under typical processing conditions and the dominance of N atoms among the dilute ‘soup’ ofpotentially reactive N-containing species incident on the growing diamond surface.Ways inwhich these various N-containing species may enhance growth rates are also discussed.
- Добавил в систему: Манкелевич Юрий Александрович