Electrical and optical properties of InN with periodic metallic in insertionsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of 2-48 monolayers. It was found that indium insertions do not change markedly carrier mobility in the composites, that remains in the 1300-1600 cm(2)/(V s) range, while carrier concentration increases with rising In amount. Spectra of thermally detected optical absorption do not exhibit a noticeable Burstein-Moss shift of a principal absorption edge with increasing the carrier concentration, but rather complicated modification of their shapes.