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The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated siliconстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Terukov E.I., Kudoyarova V.K., Kon'kov O.I., Konstantinova E.A., Kamenev B.V., Timoshenko V.Y.
- Журнал: Semiconductors
- Том: 34
- Номер: 1
- Год издания: 2000
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 92
- Последняя страница: 94
- DOI: 10.1134/1.1187952
- Аннотация: Kinetics of the decay of photoluminescence of Er impurity in the films of amorphous hydrogenated Si a-Si:H[Er] was studied for the first time. The films were obtained either by cosputtering of Si and Er targets with the use of the technology of dc silane decomposition in a magnetic field (MASD) or by radio-frequency decomposition of silane. In the second case, an Er(TMHD)(3) polymer powder was used as the source of Er. It is shown that, at room temperature, the a-Si:H[Er] films obtained by the MASD method feature the characteristic times of Er photoluminescence decay equal to 10-15 mu s, which is 20 times smaller than in the case of Er-doped crystalline Si (c-Si[Er, O]) as measured at liquid-nitrogen temperature. For the a-Si:H[Er] films obtained by radio-frequency decomposition of silane, the decay times of Er photoluminescence amount to 2 mu s. The difference in the photoluminescence decay times is related to dissimilarities in the local surroundings of Er atoms in the a-Si:H[Er] films obtained by different methods. (C) 2000 MAIK "Nauka/Interperiodica".
- Добавил в систему: Тимошенко Виктор Юрьевич