Implantation of high-energy ions produced by femtosecond laser pulsesстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Germanium ions of an expanding plasma were implanted in a silicon collector. The plasma was produced by a femtosecond laser pulse with an intensity of similar to 10(15) W cm(-2) at the surface of the solid-state target. A technique was proposed for determining the energy characteristics of the ion component of the laser plasma from the density profile of the ions implanted in the substrate.