3rd-order optical nonlinearity and all-optical switching in porous siliconстатья
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Дата последнего поиска статьи во внешних источниках: 15 января 2016 г.
Аннотация:The third-order optical nonlinearity ((3)(chi)) of porous silicon has been measured using the Z-scan technique. Intensity dependent absorption was observed and attributed to a resonant two photon absorption process. The real and imaginary parts of ((3)(chi)) have been measured at 665 nm and found to be 7.5x10(-9) esu and -1.9x10(-9) esu, respectively. This constitutes a significant esu enhancement over crystalline silicon, All optical switching based on nonlinear absorption is demonstrated.