Nonlinear transfer of an intense few-cycle terahertz pulse through opaque n-doped Siстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 6 декабря 2018 г.
Аннотация:Extremely intense few-cycle terahertz pulses exhibit complex nonlinear behavior under interaction with ndoped opaque Si having low field transmission of ∼0.02%. Transmission of a 700-fs pulse with central frequency ∼1.5 THz through the Si sample increases up to ∼8% for the external field strength of 5 MV/cm and then drops twofold at ∼20MV/cm. Electro-optical sampling measurements revealed formation of a single-cycle terahertz pulse at this field due to generation of a thin ionized layer by the first intense oscillation of the field.We explained
the data obtained from the competition of processes of collision electron-phonon rate fast increase and saturation, as well as ionization under action of an intense THz field.