Trapping of Oxygen Vacancies at Crystallographic Shear Planes in Acceptor-Doped Pb-Based Ferroelectricsстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 27 сентября 2016 г.
Аннотация:We report on defect chemistry of the acceptor Fe3+ doping in ferroelectric PbTiO3. With advanced transmission electron microscopy, powder X-ray and neutron diffraction we demonstrate that even at concentrations as low as ~1.7% (~ABO2.95) the oxygen vacancies are trapped into extended planar defects, crystallographic shear planes. We investigate the evolution of these defects upon doping and unravel their detailed atomic structure using the formalism of superspace crystallography, thus unveiling their role in non-stoichiometry in the Pb-based perovskites.