Specific Features of Recombination in Layered a-Si:H Filmsстатья
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Дата последнего поиска статьи во внешних источниках: 12 октября 2015 г.
Аннотация:The absorbed light spectral composition determines the type of carrier generation: interband generation or mixed generation that also includes the generation of electrons from levels of the valence-band tail.
The generation type affects the value and temperature dependence of the electron recombination rate in a-Si:H layered films. This effect is caused by a variation in the occupation of the levels of silicon dangling bonds and the valence band tail with electrons upon a change in the carrier generation type. As a result, in the case of mixed carrier generation in the investigated films with a low concentration of native dangling bonds,
electron recombination in the films is slow and recombination at the levels of the valence-band tail can prevail up to room temperature.
DOI: 10.1134/S1063782612030165