Four-angle evaporation method for the preparation of single electron tunneling devicesстатья
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Дата последнего поиска статьи во внешних источниках: 20 марта 2018 г.
Аннотация:With a view to improving the performance of single electron tunneling (SET) devices, it is desirable to minimize the charge island dimensions. This would allow higher operating temperatures to be achieved by a reduction of the island capacitance and the background charge noise to be reduced by minimization of the contact area between island and substrate. In this paper, a new fabrication method is presented which combines a four-angle evaporation method with a dry etching process and allows SET devices to be prepared with self-aligned positioning of a small island.