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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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The electron beam charge kinetics of Al2O3 and SiO2 has been studied by scanning electron microscope. It has been found a large difference in kinetics for the initial dielectric samples in comparison with the samples pre-irradiated by electrons and ions. This difference can be explained by radiation-induced defect formation. It has been shown a strong influence of the surface structure modification and changes in the electrical characteristics of the surface, in particular the charge spreading.