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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Iron ions with energies of 90 and 250 keV and the irradiation dose of 1016 ions/cm2 were implanted in the single crystal of silicon (110). The distribution profiles of implanted impurity was studied by the method of Rutherford backscattering coupled with channeling. The experimental results were compared with the results of simulations of binary collisions of the Monte Carlo method in the TRIM program. Shown that at an energy of 250 keV, the average projected range are the same, but with energy 90 keV the difference is 35%. Also it specified that the calculation takes into account the incorrect dose dependence at energies of 90 - 250 keV