Mosca M.
Количество цитирований статей в журналах по данным
Web of Science: 17,
Scopus: 21
IstinaResearcherID (IRID): 238298854
Деятельность
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Статьи в журналах
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2020
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
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Polyakov A.Y.,
Haller C.,
Butté R.,
Smirnov N.B.,
Alexanyan L.A.,
Kochkova A.I.,
Shikoh S.A.,
Shchemerov I.V.,
Chernykh A.V.,
Lagov P.B.,
Pavlov Yuri S.,
Carlin J.F.,
Mosca M.,
Grandjean N.,
Pearton S.J.
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в журнале Journal of Alloys and Compounds, издательство Elsevier BV (Netherlands), том 845, с. 156269
DOI
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2020
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
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Polyakov A.Y.,
Haller C.,
Butté R.,
Smirnov N.B.,
Alexanyan L.A.,
Shikoh Ali Sehpar,
Shchemerov Ivan V.,
Chernykh Sergey V.,
Lagov P.B.,
Pavlov Yuri S.,
Kochkova Anastasia I.,
Carlin Jean-Francois,
Mosca Mauro,
Grandjean Nicolas,
Pearton Stephen J.
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в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111
DOI
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2019
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
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Polyakov A.Y.,
Haller C.,
Smirnov N.B.,
Shiko A.S.,
Shchemerov I.V.,
Chernykh S.V.,
Alexanyan L.A.,
Lagov P.B.,
Pavlov Yu S.,
Carlin J.F.,
Mosca M.,
Butté R.,
Grandjean N.,
Pearton S.J.
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в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 126, № 12, с. 125708
DOI