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Статьи в журналах
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- 2020 Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
- Polyakov A.Y., Haller C., Butté R., Smirnov N.B., Alexanyan L.A., Shikoh Ali Sehpar, Shchemerov Ivan V., Chernykh Sergey V., Lagov P.B., Pavlov Yuri S., Kochkova Anastasia I., Carlin Jean-Francois, Mosca Mauro, Grandjean Nicolas, Pearton Stephen J.
- в журнале Journal of Physics D - Applied Physics, издательство IOP Publishing ([Bristol, UK], England), том 53, № 44, с. 445111 DOI
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- 2019 Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
- Polyakov A.Y., Haller C., Smirnov N.B., Shiko A.S., Shchemerov I.V., Chernykh S.V., Alexanyan L.A., Lagov P.B., Pavlov Yu S., Carlin J.F., Mosca M., Butté R., Grandjean N., Pearton S.J.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 126, № 12, с. 125708 DOI