|
ИСТИНА |
Войти в систему Регистрация |
Интеллектуальная Система Тематического Исследования НАукометрических данных |
||
Proton-irradiation technology for high-frequency high-current silicon welding diodeтезисы доклада Тезисы
- Авторы: Lagov P.B., Drenin A.S., Zinovjev M.A.
- Сборник: iNTERNATIONAL CONGRESS ON ENERGY FLUXES AND RADIATION EFFECTS (EFRE2016)
- Серия: 17th International Conference on Radiation Physics and Chemistry of Condensed Matter (17 RPC)
- Тезисы
- Год издания: 2016
- Место издания: Tomsk Polytechnic University Publishing House Tomsk, Russia
- Первая страница: 445
- Последняя страница: 445
- Аннотация: Main fundamental parameter that determines rectifier diode frequency except its geometry is minor charge carrier lifetime in active regions and its spatial distribution. Lifetime value depends on characteristics of recombination centres in semiconductors, such as energy level in forbidden zone, electrons and holes capture cross sections and concentration. An optimum and stable in time recombination centres distribution in welding diode structure will provide needed fast and soft reverse recovery characteristics, low forward voltage drop, low leakage, low power losses and temperature swing during working cycle, high reliability. In this work an optimum proton irradiation regimes were determined to provide more than 20 kHz frequency, very high softness factor up to 5, leakage current lower than 1 uA for 50 mm diameter 7 kA/400 V nano-Ag sintered welding diode Al/Si/Mo structure. Silicon diode with such parameters very suitable for high frequency resistance welding machines of new generation for robotic welding. Today there is no welding diode with such parameters on the global market.
- Добавил в систему: Лагов Петр Борисович
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | EFRE2016.pdf | EFRE2016.pdf | 625,7 КБ | 3 февраля 2018 [lagov2000] |