Investigation of the gapless state induced by pressure in Hg1−x Cd x Te alloysстатья

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[1] Investigation of the gapless state induced by pressure in hg1−x cd x te alloys / N. B. Brandt, O. N. Belousova, Y. G. Ponomarev, J. R. Anderson // Journal of Low Temperature Physics. — 1976. — Vol. 24, no. 3-4. — P. 471–490. We report the results of an experimental study of the gapless state (GS) induced inp-type semimetallic alloys Hg 1−x Cd x Te (0<x<0.15) by pressure. Galvanomagnetic effects in weak magnetic fields (2≤T<300 K) and the Shubnikov-de Haas effect have been investigated in the pressure interval 1≤p<15 kbar. Direct evidence for the existence inp-type semimetallic alloys of an impurity hole band overlapping with the conduction band by 3–4 me V is obtained. At liquid helium temperatures the Fermi level is located in the impurity band, so that two groups of carriers take part in transport effects: “light” electrons in the conduction band and “heavy” holes in the impurity band. The electron Fermi energyE F is proved to be essentially constant during the transition to the GS. A linear dependence of the electron effective mass at the band edgem* (0) upon the gapE g is obtained. A significant role of scattering of electrons into the impurity band at liquid helium temperatures is revealed. [ DOI ]

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