High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3статья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 января 2018 г.
Аннотация:Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high
interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high- eld Hall resistance and low- eld magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up
to 50 K in nominally undoped bulk Bi2Se3 with a high electron density n of about 2·1019 cm−3. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi2Se3 and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.