Место издания:World Scientific Pub. Co. Pte. Ltd Singapore Singapore
Первая страница:564
Последняя страница:567
Аннотация:Numerical calculations of the optical gain of TM and TE polarization modes in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs double heterostructures of different quantum well width (from 40 to 200 Ǻ) and phosphor content (y = 0 - 0.20) were performed for different values of the external uniaxial compression along [110], [100] and [001] directions. The results of calculations demonstrate the possibility of the effective TM/TE tuning and switching by uniaxial compression along [100] and [110] directions in A3B5 zinc-blend light emitting diodes with “light hole up configuration” of quantized levels in a quantum well.