Insulator-metal transition in diluted magnetic semiconductor Pb1-x-ySnxVyTe under pressureтезисы доклада

Дата последнего поиска статьи во внешних источниках: 19 сентября 2015 г.

Работа с тезисами доклада


[1] Insulator-metal transition in diluted magnetic semiconductor pb1-x-ysnxvyte under pressure / E. P. Skipetrov, A. N. Golovanov, B. B. Kovalev et al. // Book of Abstracts of Moscow International Symposium on Magnetism. — ООО "МаксПресс" Moscow, 2011. — P. 722. In order to investigate the electronic structure rearrangement in Pb1-xSnxTe alloys, doped with vanadium, under pressure in the present work the galvanomagnetic properties in weak magnetic fields (4.2<T<300 K, B<0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B<7 T) in Pb1-x-ySnxVyTe (x=0.05-0.20, y≤0.01) under hydrostatic pressure P≤15 kbar have been studied. Experimental results are explained assuming the linear shift of vanadium deep level down to the valence band, sequential intersection of the level with the middle of the gap and with the valence band top under pressure and opposite movement of the level with the increase of temperature at the fixed pressure. It is shown that under pressure deep vanadium level moves almost parallel to the conduction band bottom. Intersection of the level with the valence band top leads to the flowing of electrons from the valence band to the level, inducing insulator-metal transition, changing in the impurity band occupancy and in the magnetic properties of the investigated alloy. The pressure and temperature coefficients of vanadium deep level energy are determined and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe alloys under pressure is proposed.

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