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Galvanostatic investigation of the transient kinetics of anodic silicon oxidationстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 10 августа 2018 г.
- Авторы: Parkhutik V.P., Makushok Y.E., Kudryavtsev V.I., Khodan A.N.
- Журнал: SOVIET ELECTROCHEMISTRY
- Том: 23
- Номер: 2
- Год издания: 1987
- Первая страница: 192
- Последняя страница: 198
- Аннотация: The anodic oxidation kinetics of silicon with n- and p-type conduction was investigated in aqueous sulfuric acid solutions. Two types of kinetic relations were found to exist between anodic potential and charge: in electrolytes at room temperature one finds a nonmonotonic aperiodic curve with a single potential maximum; at higher solution temperatures this curve changes to a periodic function with several minima and maxima. The composition of the resulting anodic silicon oxides was studied by x-ray photoelectron spectroscopy. A model involving the anodic formation of porous silicon oxide was suggested to explain the data obtained.
- Добавил в систему: Ходан Анатолий Николаевич