|
ИСТИНА |
Войти в систему Регистрация |
Интеллектуальная Система Тематического Исследования НАукометрических данных |
||
Kinetics of Formation and Growth of Epitaxial SrTiO3 Films of Single-Crystal (001) SrTiO3 Supportsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 декабря 2017 г.
- Авторы: Khodan A.N., Kanashenko S.L., Crete D.G.
- Журнал: Protection of Metals and Physical Chemistry of Surfaces
- Том: 48
- Номер: 1
- Год издания: 2012
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 59
- Последняя страница: 67
- DOI: 10.1134/S207020511105008X
- Аннотация: The aim of this study was to quantitatively estimate the kinetics of the formation and growth of oxide SrTiO3 (STO) films using the method of the in situ reflection high-energy electron diffraction (RHEED) and compare the obtained results with the known growth models and theoretical estimates. The kinetics of the relaxation and crystallization of particles is studied under pulsed laser deposition (PLD) from oxide targets onto (001)STO supports or onto the surface of STO film growth at 650-800°C. Deposition frequencies of 0.1-10 Hz typical of PLD were used. The surface morphology and film structure was studied ex situ using the methods of AFM and X-ray-structural analysis. It was found that the time of relaxation of deposited particles is within the range of 2-20 s, which greatly exceeds or is comparable to the relative pulse duration. It was experimentally shown that structural distortions in epitaxial films for temperatures of ≤900°C are mainly due to the high rate of deposition and limited surface mobility of particles. The effect of structural relaxation in films is observed after the end of deposition; the time constant of bulk structural relaxation is ∼10 - ∼100 s or more. The obtained kinetic parameters of the formation of an oxide structure may be useful for the development of crystallization theory, as well as to optimize the conditions of epitaxial oxide film growth.
- Добавил в систему: Ходан Анатолий Николаевич