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Epitaxial YBa2Cu3O9(7-δ)/SrTiO3 heterostructures grown by pulsed laser deposition for voltage agile microwave filter applicationsстатья
- Авторы: Bouzehouane K., Woodall P., Marcilhac B., Khodan A.N., Crété D., Jacquet E., Mage J.C., Contour J.P.
- Журнал: J. Phys. IV France
- Том: 11
- Номер: 11
- Год издания: 2001
- Первая страница: Pr11-41
- Последняя страница: pr11-45
- DOI: 10.1051/jp4:20011106
- Аннотация: The performance of tunable microwave devices based on heteroepitaxial YBa2Cu3Ox/SrTiO3 films on (001) LaAlO3 substrate has been evaluated. It has been ascertained that 'out-of-plane' SrTiO3 lattice parameter is the relevant factor in determining both the agility and dielectric loss of the SrTiO3 layers. After high temperature annealing (1100 °C, 1 atm O2), only SrTiO3 layers deposited under low oxygen pressure (˜ 10-5 Torr) show an appreciable reduction of the dielectric losses whilst maintaining high agility. Annealed samples exhibit voltage independent losses of ˜ 5.10-3 simultaneously with 55% dielectric agility at 6 GHz and 77K.
- Добавил в систему: Ходан Анатолий Николаевич