Interaction of F atoms with SiOCH ultra-low-k films: I. Fluorination and damageстатья

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 июня 2015 г.

Работа с статьей


[1] Interaction of f atoms with sioch ultra-low-k films: I. fluorination and damage / T. V. Rakhimova, D. V. Lopaev, Y. A. Mankelevich et al. // Journal of Physics D - Applied Physics. — 2015. — Vol. 48, no. 17. — P. 175203–(13pp). The interaction of F atoms with porous SiOCH low-k films at a temperature of ∼ 14 oC is studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films with a k-value from 1.8 to 2.5 and porosity from 51 to 24% were exposed to F atoms in the far downstream of an SF6 inductively coupled plasma discharge. The changes occurring in composition and chemical bonds were studied as a function of exposing F dose using various techniques such as Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, energy-dispersive x-ray spectroscopy and spectroscopic ellipsometry. It is shown that fluorination of the pore walls with incorporation of F into surface complexes is the fastest process of SiOCH modification occurring without an activation barrier. The higher porosity and the higher pore connectivity promote deeper F penetration and fluorination into the material. The slower next stage of low-k SiOCH modification is H atom abstraction by F atoms from –CH3 groups with the formation of –CFxHy surface species. The combined random walk and kinetics model was developed to analyze the mechanism of the observed modification. Two mutually dependent parts of the model describe F atom penetration into the porous film simultaneously with stepwise H replacement in −CH3 groups. The model results in evolution of chemical modification inside the SiOCH films depending on the F atom dose. It is shown that the modification depth at F atom impact can be rather large, tens of nanometers at high porosity, even at low F doses, quite obtainable on etching SiOCH low-k interconnects in fluorine-based plasmas. [ DOI ]

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