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Special Features of Relaxation of Metastable States Induced Thermally and by Photoexcitation in (a-Si:H):P Filmsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 апреля 2015 г.
- Авторы: Kurova I.A., Larina É.V., and Ormont N.N.
- Журнал: Semiconductors
- Том: 34
- Номер: 3
- Год издания: 2000
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 358
- Последняя страница: 362
- Аннотация: Kinetics of relaxation of metastable states that are induced thermally or by photoexcitation and cause an increase in dark electrical conductivity of (a-Si:H):P films is discussed. It is established that the relaxation is described by expanded exponential functions with the parameters t and b depending differently on temperature in the cases of thermal excitation and photoexcitation. Thus, the relaxation of photo-induced states is characterized by a decrease in b with temperature, whereas the parameter b is almost temperature-independent for thermally induced states. It is shown that these dissimilar temperature dependences of b correlate with temperature variations of the half-width of annealing-energy distribution for these states. The observed features of relaxation of thermally induced and photo-induced metastable states are caused by different mechanisms of their formation. The origin of these states can be the same and related to activation of hydrogen-passivated phosphorus atoms.
- Добавил в систему: Ормонт Наталия Николаевна