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Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealingстатья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 апреля 2015 г.
- Авторы: Kurova I.A., Ormont N.N., Terukov E.I., Trapeznikova I.N., Afanas’ev V.P., Gudovskikh A.S.
- Журнал: Semiconductors
- Том: 35
- Номер: 3
- Год издания: 2001
- Издательство: Izdatel'stva Nauka
- Местоположение издательства: Russian Federation
- Первая страница: 353
- Последняя страница: 356
- Аннотация: The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K = 3.4x106. Increasing the annealing temperature causes the film photosensitivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures above 500°C, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level.
- Добавил в систему: Ормонт Наталия Николаевна
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| [1] | Electrical and photoelectric properties of a-si:h layered films: The influence of thermal annealing / I. A. Kurova, N. N. Ormont, E. I. Terukov et al. // Semiconductors. — 2001. — Vol. 35, no. 3. — P. 353–356. The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K = 3.4x106. Increasing the annealing temperature causes the film photosensitivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures above 500oC, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level. |