Modeling of Dry Etching in Production of MEMS

Авторы: Rusakov A., Bystrov P.A., Knizhnik A., Potapkin B.
Сборник: Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics
Год издания: 2010
Место издания: Springer Dordrecht
Первая страница: 215
Последняя страница: 223
DOI: 10.1007/978-90-481-3807-4_17
Аннотация: A numerical model of dry etching of a cavity below a planar mechanical element (e.g. a mirror or a solid gear) through a set of holes is presented. From simulations using the developed model, it is shown that complex geometries of MEMS devices and low pressure dry etching may lead to limitation of the etching rate by gas transport under mechanical elements related to a strongly inhomogeneous distribution of gas concentration under the planar element; some criteria of distinction between the systems with and without the transport limitation effect are provided. The influence of the operating mode and parameters of the etching reactor is also discussed; the models of well-stirred (continuous-flow) reactor and batch (periodic) reactor are considered.
Добавил в систему: Быстров Петр Алексеевич

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