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Formation of zirconia-ceria layers on silicon wafers using laser ablationстатья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 8 декабря 2017 г.
- Авторы: Akimov A.G., Bogomolov D.B., Gorodetskii A.E., Kazanskii L.P., Khodan A.N., Krylov I.L., Langeron J.P., Melnikova N.A., Michel D., Vignes J.L., Perrière J.
- Журнал: Thin Solid Films
- Том: 238
- Номер: 1
- Год издания: 1994
- Издательство: Elsevier Sequoia
- Местоположение издательства: Switzerland
- Первая страница: 15
- Последняя страница: 20
- DOI: 10.1016/0040-6090(94)90641-6
- Аннотация: The effects of oxygen pressure and silicon substrate temperature on the formation of zirconia, ceria and ceria-stabilised zirconia layers have been studied by electron microscopy. The composition of the layers and the interaction at the oxide/silicon interface have been analysed using Auger electron spectroscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The conditions of the epitaxial growth of cerium-stabilised zirconia films produced by laser ablation have been found. A good matching of lattice parameters may allow the use of these oxides as buffer layers for high temperature superconductive film epitaxy on silicon wafers.
- Добавил в систему: Казанский Леонид Петрович
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| [1] | Formation of zirconia-ceria layers on silicon wafers using laser ablation / A. G. Akimov, D. B. Bogomolov, A. E. Gorodetskii et al. // Thin Solid Films. — 1994. — Vol. 238, no. 1. — P. 15–20. The effects of oxygen pressure and silicon substrate temperature on the formation of zirconia, ceria and ceria-stabilised zirconia layers have been studied by electron microscopy. The composition of the layers and the interaction at the oxide/silicon interface have been analysed using Auger electron spectroscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The conditions of the epitaxial growth of cerium-stabilised zirconia films produced by laser ablation have been found. A good matching of lattice parameters may allow the use of these oxides as buffer layers for high temperature superconductive film epitaxy on silicon wafers. [ DOI ] |