The influence of δ--layer's magnetization on polarization of photoluminescence of quantum well in singular and vicinal InGaAs/GaAs/δ- heterostructuresстатья
Информация о цитировании статьи получена из
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Дата последнего поиска статьи во внешних источниках: 8 февраля 2015 г.
Аннотация:Magneto-optical properties and spin dynamics in a p-type GaAs-based
heterostructures containing an InGaAs quantum well and 2 nm thick GaAs layer doped with 5
at. % Mn (GaAs:Mn) on flat and vicinal substrates were studied between 2 and 300 K. A
significant enhancement of photoluminescence circular polarization PC = 15 % was found at
temperatures T < 30 K. In the non-magnetic quantum well PC = 0 %. The polarization of the
InGaAs quantum well photoluminescence follows the temperature dependence of the
GaAs:Mn layer magnetization. Two types of ferromagnetism were found. In the
heterostructures grown on the flat substrate parallel to the (001) GaAs plane the magnetization
obeys the Bloch T 3/2 temperature dependence while for the structures grown on the vicinal
surface (disoriented by 3°) the magnetization follows percolation dependence. The later is
attributed to the formation of strongly disordered islands of GaAs:Mn.