Field emission properties of p-type silicon tips decorated with tungsten nanoparticlesстатья

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Дата последнего поиска статьи во внешних источниках: 23 ноября 2017 г.

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[1] Field emission properties of p-type silicon tips decorated with tungsten nanoparticles / K. Victor, S. Pavel, O. Anton et al. // 30th International Vacuum Nanoelectronics Conference (IVNC). — Piscataway, NJ, United States: Piscataway, NJ, United States, 2017. — P. 138–139. An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments. [ DOI ]

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