Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

Авторы: Victor Kleshch, Pavel Serbun, Anton Orekhov, Dirk Lützenkirchen-Hecht, Alexander Obraztsov, Christian Prommesberger, Christoph Langer, Rupert Schreiner
Сборник: 30th International Vacuum Nanoelectronics Conference (IVNC)
Год издания: 2017
Издательство: Institute of Electrical and Electronics Engineers
Местоположение издательства: Piscataway, NJ, United States
Первая страница: 138
Последняя страница: 139
DOI: 10.1109/IVNC.2017.8051580
Аннотация: An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments.
Добавил в систему: Клещ Виктор Иванович

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