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Electronic properties of thin Au/nanoporous-Si/n-Si structuresстатья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Dittrich T., Kliefoth K., Sieber I., Rappich J., Rauscher S., Timoshenko V.Y.
- Журнал: Thin Solid Films
- Том: 276
- Номер: 1-2
- Год издания: 1996
- Издательство: Elsevier Sequoia
- Местоположение издательства: Switzerland
- Первая страница: 183
- Последняя страница: 186
- DOI: 10.1016/0040-6090(95)08087-2
- Аннотация: Ultrathin nanoporous Si layers (UPSL) were prepared on n-Si(100) by anodization in aqueous NH4F solution starting from an electrochemically hydrogenated surface. The thickness of the UPSL was controlled with field emission scanning electron microscopy, The interface state density (D-it) of UPSL was measured with a field-dependent pulsed surface photovoltage technique. The value of D-it, normalized to the surface area of UPSL is about 1.3 x 10(11) eV(-1) cm(-2). Au/UPSL/n-Si structures were characterized with temperature-dependent current-voltage measurements. The room-temperature barrier height and the ideality factor at the Au/UPSL interface were 0.75 eV and 1.8, respectively. The temperature dependence of the reverse current of Au/UPSL/n-Si structures showed two regions with activation energies at 120 meV and about 60 meV for temperatures below and above 200 K, respectively. Strong near-infrared electroluminescence was observed for Au/UPSL/n-Si structures. The results are discussed on the basis of the role of Si nanostructure surface conditioning with regard to the porous Si electronic properties.
- Добавил в систему: Тимошенко Виктор Юрьевич