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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric propertiesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Emelyanov A., Kazanskii A., Kashkarov P., Konkov O., Terukov E., Forsh P., Khenkin M., Kukin A., Beresna M., Kazansky P.
- Журнал: Semiconductors
- Том: 46
- Номер: 6
- Год издания: 2012
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 749
- Последняя страница: 754
- DOI: 10.1134/S1063782612060097
- Аннотация: The effect of the femtosecond laser treatment of hydrogenated amorphous silicon ( a -Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a -Si:H films photoconductance increase by femtosecond pulse laser treatment.
- Добавил в систему: Емельянов Андрей Вячеславович