Negative and persistent positive photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As

Авторы: Bogdanov E.V., Ilievsky A.A., Minina N.Ya, Savin A.M., Hansen O.P., Sorensen C.B., Kraak W.
Сборник: Reviews and short notes. Proceedings of NANOMEETING-2001. Minsk, Belarus, 22 May - 25 May, 2001
Год издания: 2001
Издательство: WORLD SCIENTIFIC PUBL CO PTE LTD
Местоположение издательства: 5 TOH TUCK LINK, SINGAPORE,SINGAPORE, 596224
Первая страница: 130
Последняя страница: 133
Аннотация: Illumination of a double p-Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterised by an approximately 1.5 increase of the two-dimensional hole concentration. This metastable state may be explained with a model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.
Добавил в систему: Богданов Евгений Владимирович

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