Heavy and light holes states mixing and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1 xAs nanostructures under uniaxial compressionстатья
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Место издания:World Scientific Pub. Co. Pte. Ltd Singapore, Singapore
Первая страница:211
Последняя страница:214
Аннотация:Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y=0.16) double heterostructure were performed for different values of the external uniaxial compression along [110] direction. The results of calculations explain the nonlinear character of the photon energy shift and electroluminescence intensity increase that were experimentally observed in these structures under uniaxial compression up to 5 kbar.