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Polarization memory of photoluminescence in anisotropic nanocomposite films based on porous silicon and carbon dotsстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 4 марта 2026 г.
- Авторы: Deng Yingying, Masasina Anastasiya, Mitiushev Nikita, Ikonnikov Anton, Presnov Denis, Yakunin Valery, Firsov Anatoliy, Baranov Andrey, Timoshenko Viktor
- Журнал: Applied Physics A: Materials Science and Processing
- Том: 132
- Номер: 2
- Год издания: 2026
- Издательство: Springer Verlag
- Местоположение издательства: Germany
- Первая страница: 1
- Последняя страница: 13
- Номер статьи: 122
- DOI: 10.1007/s00339-025-09274-4
- Аннотация: This work studies the interplay between nanostructural anisotropy, dielectric confinement, and polarization memory inporous silicon films with embedded carbon dots (CDs). Using polarization-resolved photoluminescence spectroscopy andtheoretical modeling based on the Lavallard-Suris dielectric confinement model, which is extended to spatially orderedellipsoidal nanostructures, we demonstrate that the polarization degree of the photoluminescence emission of CDs is determinedby the geometric morphology and dielectric contrast of the host matrix. Elongated nanostructures within poroussilicon enhance the polarization memory, while the porous matrix spatially confines the CDs, aligning their emissiondipoles and reducing depolarization by restricting rotational freedom. Controlled oxidation of the porous silicon films isfound to eliminate structural anisotropy, diminishing the polarization memory despite improved CDs integration. Experimentalresults confirm that both in-plane anisotropic porous silicon films and oxidized ones with incorporated CDs retainmatrix anisotropy and align well with the ordered model. Angular shifts in the photoluminescence polarization correlatewith preferential crystalline axis orientation in the porous silicon matrix. These findings enable the rational design ofpolarization-sensitive optoelectronic devices, such as optical sensors and switches, by leveraging the tunable nanostructureand dielectric properties of hybrid porous silicon-CDs systems.
- Добавил в систему: Тимошенко Виктор Юрьевич
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