Аннотация:Interconnector technologies of a new generation involve the use of ruthenium. The high cost of experimentalstudy of sputtering and etching of trenches in Ru leads to the need to optimize it by modeling that requiresknowledge of the cross sections of elementary processes of interaction of plasma particles with Ru. In thiswork, the binary interatomic potentials of Ru-Ru and Ru-Si pairs tested by the molecular dynamics method, andthe Ru-O one calculated by the method of multi-reference configurational interaction MRCI/AV5Z were used tocalculate the elastic scattering cross sections of the atomic pairs in the energy range typical of plasma etchingchambers
