Аннотация:The concentration of hydrogen and N3VH defects in natural diamonds was determined using secondary ionmass spectrometry (SIMS) and infrared (IR) spectroscopy. A method for quantitative analysis of hydrogen was proposed based on the creation of reference samples directly in the studied samples by direct implantation of hydrogen. A linear correlation was established between the IR absorption of the paintwork material at 3107 cm−1 and the hydrogen concentration determined by SIMS: CH = S N3VHI3107, where S N3VH = (2.15 ± 1.44) · 1017 cm−1. A detailed characteristics of all possible hydrogen defects in diamonds is given.